HYB18T512161BF-28 datasheet, PDF

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > storage> storage> HYB18T512161BF-28

HYB18T512161BF-28: Description512-Mbit x16 DDR2 SDRAM; Categorystorage storage; File Size1MB，41 Pages; ManufacturerQIMONDA; Environmental Compliance

Download Datasheet Parametric Compare View All

HYB18T512161BF-28 Overview

512-Mbit x16 DDR2 SDRAM

HYB18T512161BF-28 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.55 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	350 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
length	12.5 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	84
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.004 A
Maximum slew rate	0.149 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	10 mm

HYB18T512161BF-28 Related Products

	HYB18T512161BF-28	HYB18T512161BF-26	HYB18T512161BF	HYB18T512161BF-22	HYB18T512161BF-33
Description	512-Mbit x16 DDR2 SDRAM	512-Mbit x16 DDR2 SDRAM	512-Mbit x16 DDR2 SDRAM	512-Mbit x16 DDR2 SDRAM	512-Mbit x16 DDR2 SDRAM
Is it Rohs certified?	conform to	-	-	conform to	conform to
Maker	QIMONDA	-	-	QIMONDA	QIMONDA
Parts packaging code	BGA	-	-	BGA	BGA
package instruction	TFBGA, BGA84,9X15,32	-	-	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32
Contacts	84	-	-	84	84
Reach Compliance Code	unknown	-	-	unknow	unknow
ECCN code	EAR99	-	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.55 ns	-	-	0.45 ns	0.6 ns
Other features	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	350 MHz	-	-	450 MHz	300 MHz
I/O type	COMMON	-	-	COMMON	COMMON
interleaved burst length	4,8	-	-	4,8	4,8
JESD-30 code	R-PBGA-B84	-	-	R-PBGA-B84	R-PBGA-B84
length	12.5 mm	-	-	12.5 mm	12.5 mm
memory density	536870912 bit	-	-	536870912 bi	536870912 bi
Memory IC Type	DDR DRAM	-	-	DDR DRAM	DDR DRAM
memory width	16	-	-	16	16
Number of functions	1	-	-	1	1
Number of ports	1	-	-	1	1
Number of terminals	84	-	-	84	84
word count	33554432 words	-	-	33554432 words	33554432 words
character code	32000000	-	-	32000000	32000000
Operating mode	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	-	-	95 °C	95 °C
organize	32MX16	-	-	32MX16	32MX16
Output characteristics	3-STATE	-	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	-	TFBGA	TFBGA
Encapsulate equivalent code	BGA84,9X15,32	-	-	BGA84,9X15,32	BGA84,9X15,32
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	-	-	NOT SPECIFIED	NOT SPECIFIED
power supply	1.8 V	-	-	1.8 V	1.8 V
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified
refresh cycle	8192	-	-	8192	8192
Maximum seat height	1.2 mm	-	-	1.2 mm	1.2 mm
self refresh	YES	-	-	YES	YES
Continuous burst length	4,8	-	-	4,8	4,8
Maximum standby current	0.004 A	-	-	0.004 A	0.004 A
Maximum slew rate	0.149 mA	-	-	0.173 mA	0.129 mA
Maximum supply voltage (Vsup)	1.9 V	-	-	2.1 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	-	-	1.9 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	-	2 V	1.8 V
surface mount	YES	-	-	YES	YES
technology	CMOS	-	-	CMOS	CMOS
Temperature level	OTHER	-	-	OTHER	OTHER
Terminal form	BALL	-	-	BALL	BALL
Terminal pitch	0.8 mm	-	-	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	-	-	NOT SPECIFIED	NOT SPECIFIED
width	10 mm	-	-	10 mm	10 mm

Recommended Resources

Principle circuit diagram of monitoring acid rain acidity

5V to 2.5V voltage stabilizing circuit

Power amplifier circuit diagram a

M7130 surface grinder circuit

Hearing aid, hypnosis, memory enhancement three-purpose machine circuit

DC motor starting circuit controlled by voltage relay

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components