HYB25D512160CF-5 datasheet, PDF

HYB25D512160CF-5: DescriptionDDR SDRAM; Categorystorage storage; File Size2MB，42 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYB25D512160CF-5 Overview

DDR SDRAM

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TBGA, BGA60,9X12,40/32
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
length	12 mm
memory density	536870912 bi
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.0046 A
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	10 mm

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