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HYB25D512160CFL-5

Description
DDR SDRAM
Categorystorage    storage   
File Size2MB,42 Pages
ManufacturerQIMONDA
Environmental Compliance
Download Datasheet Parametric View All

HYB25D512160CFL-5 Overview

DDR SDRAM

HYB25D512160CFL-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeBGA
package instructionTBGA, BGA60,9X12,40/32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
length12 mm
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply2.6 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.0046 A
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10 mm

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