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MPSA06-T

Description
Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur
Categorysemiconductor    Discrete semiconductor   
File Size72KB,1 Pages
ManufacturerRectron
Environmental Compliance
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MPSA06-T Overview

Bipolar Transistors - BJT NPN 0.5A 80V Gen Pur

MPSA06-T Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerRectron
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO80 V
Emitter- Base Voltage VEBO4 V
Collector-Emitter Saturation Voltage0.25 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT100 MHz
Height5 .2 mm
Length5.33 mm
PackagingReel
Width4 .19 mm
Continuous Collector Current0.5 A
Pd - Power Dissipation625 mW
Factory Pack Quantity2000
Unit Weight0.016000 oz
TECHNICAL SPECIFICATION
MPSA06
Dimensions
Unit
V
V
V
mW
mA
°C/W
° C/W
D IM
A
M IN
4 .3 2
4 .4 5
3 .1 8
0 .4 1
0 .3 5
5
q
1 .1 4
1 .1 4
1 2 .7 0
M AX
5 .3 3
5 .2
4 .1 9
0 .5 0
0 .5 0
5
q
1 .4 0
1 .5 3
-
Plastic Package Transistors (NPN)
Absolute Maximun Ratings (Ta=25
o
C)
Items
Collector - Base
Collector - Emitter
Emitter - Base
Power Dissipation
Collector Current
Junction to Case
Junction to Ambient
Symbol
V
CBO
V
CEO
V
EBO
P
D
I
C
R
th (JC)
R
th (JA) (1)
Ratings
80
80
4
625
500
83.3
200
TO- 92
(1) Device soldered to a typical PCB
Pin Configuration
Code Style
TO - 92
Pin 1
Collector
Pin 2
Base
Pin 3
Emitter
B
C
D
E
F
G
H
K
All dimensions in mm
Electrical Characteristics (Ta=25
o
C)
Description
Collector - Emitter Breakdown Voltage
Emitter - Base Voltage
Collector - Cut off Current
DC Current Gain
Collector Emitter (sat) Voltage
Base Emitter (on) Voltage
Symbol
V
CEO
V
EBO
I
CEO
I
CBO
h
FE
V
CE (sat)
V
BE (on)
Test Conditions
I
C
= 1mA, I
B
= 0
I
E
= 100uA, I
C
= 0
V
CE
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
I
C
= 10mA, V
CE
= 1V
I
C
= 100mA, V
CE
= 1V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1V
100
100
0.25
1.2
V
V
Min
80
4
0.1
0.1
Typ
Max
Units
V
V
µ
A
µ
A
Dynamic Characteristics (Ta=25
o
C)
Current gain Bandwidth Product
f
T
I
C
= 10mA V
CE
= 2V
f = 100 MHz
100
MHz
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