C4D08120E
®
Silicon Carbide Schottky Diode
V
RRM
Q
c
=
1200 V
12 A
Z-Rec
Rectifier
Features
I
F
(
T
C
=135˚C
)
=
= 37 nC
Package
•
•
•
•
•
•
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-252-2
PIN 1
PIN 2
Benefits
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
CASE
Applications
Part Number
C4D08120E
Package
TO-252-2
Marking
C4D08120
•
•
•
•
•
Solar Inverters
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Maximum Ratings
(T
C
=25°C unless otherwise specified)
Symbol Parameter
V
RRM
V
RSM
V
DC
I
F
I
FRM
I
FSM
I
F,Max
P
tot
dV/dt
∫i
2
dt
T
J
, T
stg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Diode dV/dt ruggedness
i
2
t value
Operating Junction and Storage Temperature
Value
1200
1300
1200
24.5
12
8
37.5
25
64
50
600
480
136.5
59
200
20.5
12.5
-55 to
+175
Unit
V
V
V
A
A
A
A
W
V/ns
A
2
s
˚C
T
C
=25˚C
T
C
=135˚C
T
C
=157˚C
Test Conditions
Note
Fig. 3
T
C
=25˚C, t
P
=10 ms, Half Sine pulse
T
C
=110˚C, t
P
=10 ms, Half Sine pulse
T
C
=25˚C, t
P
=10 ms, Half Sine pulse
T
C
=110˚C, t
P
=10 ms, Half Sine pulse
T
C
=25˚C, t
P
=10 ms, Pulse
T
C
=110˚C, t
P
=10 ms, Pulse
T
C
=25˚C
T
C
=110˚C
V
R
=0-650V
T
C
=25˚C, t
P
=10 ms
T
C
=110˚C, t
P
=10 ms
Fig. 8
Fig. 8
Fig. 4
1
C4D08120E Rev. F, 01-2017
Electrical Characteristics
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.5
2.2
35
100
37
560
37
27
10.5
Max.
1.8
3
250
350
Unit
V
μA
nC
Test Conditions
I
F
= 8 A T
J
=25°C
I
F
= 8 A T
J
=175°C
V
R
= 1200 V T
J
=25°C
V
R
= 1200 V T
J
=175°C
V
R
= 800 V, I
F
= 8 A
di/dt = 200 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V
Note
Fig. 1
Fig. 2
Fig. 5
C
E
C
Total Capacitance
Capacitance Stored Energy
pF
μJ
Fig. 6
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance from Junction to Case
Typ.
1.1
Unit
°C/W
Note
Fig. 9
Typical Performance
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
0
2
2.5
3
3.5
4
4.5
0
200
400
600
800
1000
1200
1400
1600
1800
100
50
500
T
J
=-55°C
T
J
= 25°C
T
= 75°C
J
T
=125°C
T
J
=175°C
J
450
400
350
300
I
R
(μA)
I
F
(A)
250
200
150
T
J
=-55°C
T
J
= 25°C
T
= 75°C
J
T
=125°C
T
J
=175°C
J
V
F
(V)
V
R
(V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C4D08120E Rev. F, 01-2017
Typical Performance
80
70
60
50
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
I
F(peak)
(A)
40
30
20
10
0
25
50
75
100
125
150
175
P
Tot
(W)
25
50
75
100
125
150
175
T
C
˚C
Figure 3. Current Derating
T
C
˚C
Figure 4. Power Derating
50
45
40
35
600
500
400
Q
c
(nC)
25
20
15
10
5
0
0
200
400
600
800
1000
C (pF)
30
300
200
100
0
0.1
1
10
100
1000
V
R
(V)
Figure 5. Recovery Charge vs. Reverse Voltage
V
R
(V)
Figure 6. Capacitance vs. Reverse Voltage
3
C4D08120E Rev. F, 01-2017
Typical Performance
20.0
20
18
18.0
16
16.0
E
C
Capacitive Energy (uJ)
C
1000
1000
14
14.0
12
12.0
10
10.0
8
8.0
6
6.0
4
4.0
2
2.0
0
0.0
I
(A)
I
FSM
FSM
(A)
E (
m
J)
100
100
T
J_initial
= 25°C
T
= 110°C
J_initial
0 200 400 600 800 1000
0
200
400
600
800
1000
10
0
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
V
R
Reverse Voltage (V)
V
R
(V)
tp(s)
t
p
(s)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Typical Capacitance Stored Energy
1
Thermal Resistance (˚C/W)
0.5
0.3
0.1
100E-3
0.05
0.02
0.01
SinglePulse
10E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D08120E Rev. F, 01-2017
Package Dimensions
Package TO-252-2
SYMBOL
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
H
L
L2
L3
L4
θ
θ
MILLIMETERS
MIN
MAX
2.159
2.413
0
0.13
0.64
0.89
0.653
1.143
5.004
5.6
0.457
0.61
0.457
0.864
5.867
6.248
5.21
-
6.35
7.341
4.32
-
4.58 BSC
9.65
10.414
1.106
1.78
0.51 BSC
0.889
1.27
0.64
1.01
0°
8°
Tjb June 2015
MX+DI+PSI
Recommended Solder Pad Layout
Part Number
C4D08120E
Package
TO-252-2
Marking
C4D08120
TO-252-2
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C4D08120E Rev. F, 01-2017
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