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PN2907ATFR

Description
Bipolar Transistors - BJT PNP Transistor General Purpose
CategoryDiscrete semiconductor    The transistor   
File Size438KB,14 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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PN2907ATFR Overview

Bipolar Transistors - BJT PNP Transistor General Purpose

PN2907ATFR Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionCYLINDRICAL, O-PBCY-T3
Manufacturer packaging code135AR
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time14 weeks
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns
Base Number Matches1

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Brand Name ON Semiconductor ON Semiconductor ON Semiconductor -
Is it lead-free? Lead free Lead free Lead free -
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 -
Manufacturer packaging code 135AR 135AR 135AR -
Reach Compliance Code compliant compliant compliant -
ECCN code EAR99 EAR99 EAR99 -
Factory Lead Time 14 weeks 1 week 1 week -
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A -
Collector-emitter maximum voltage 60 V 60 V 60 V -
Configuration SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 50 50 50 -
JEDEC-95 code TO-92 TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e3 e3 e3 -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP PNP -
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount NO NO NO -
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON -
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz -
Maximum off time (toff) 100 ns 100 ns 100 ns -
Maximum opening time (tons) 45 ns 45 ns 45 ns -
Base Number Matches 1 1 1 -

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