ZVN3310A datasheet, PDF - EEWORLD Datasheet

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ZVN3310A: DescriptionMOSFET N-Chnl 100V; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZVN3310A Overview

MOSFET N-Chnl 100V

ZVN3310A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	17 weeks
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	0.2 A
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS

* R

DS(on)

= 10Ω

ZVN3310A

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

100

200

2

±

20

625

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

100

40

15

5

7

6

7

500

10

100

0.8

2.4

20

1

50

MAX. UNIT CONDITIONS.

V

nA

µA

mA

Ω

mS

pF

ns

V

DD

≈25V,

I

D

=500mA

V

DS

=25V, V

GS

=0V, f=1MHz

I

D

=1mA, V

GS

=0V

ID=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=100V, V

GS

=0

V

DS

=80V, V

GS

=0V, T=125°C

(2)

V

DS

=25V, V

GS

=10V

V

GS

=10V,I

D

=500mA

V

DS

=25V,I

D

=500mA

Forward Transconductance(1)(2 g

fs

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

3-378

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