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HGTG12N60C3D
Data Sheet
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C. The IGBT used is the
development type TA49123. The diode used in anti parallel
with the IGBT is the development type TA49061.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49117.
Features
• 24A, 600V at T
C
= 25
o
C
• Typical Fall Time . . . . . . . . . . . . . . . . 210ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
HGTG12N60C3D
PACKAGE
TO-247
BRAND
G12N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
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