|
BLF6G10LS-135RN:11 |
BLF6G10LS-135R118 |
Description |
RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin |
RF MOSFET Transistors LDMOS TNS |
Product Attribute |
Attribute Value |
Attribute Value |
Manufacturer |
NXP |
NXP |
Product Category |
RF MOSFET Transistors |
RF MOSFET Transistors |
RoHS |
Details |
Details |
Transistor Polarity |
N-Channel |
N-Channel |
Id - Continuous Drain Current |
32 A |
32 A |
Vds - Drain-Source Breakdown Voltage |
65 V |
65 V |
Rds On - Drain-Source Resistance |
100 mOhms |
100 mOhms |
Technology |
Si |
Si |
Gain |
21 dB |
21 dB |
Output Power |
26.5 W |
26.5 W |
Maximum Operating Temperature |
+ 150 C |
+ 150 C |
Mounting Style |
SMD/SMT |
SMD/SMT |
Package / Case |
SOT-502B-3 |
SOT-502B-3 |
Configuration |
Single |
Single |
Operating Frequency |
0.7 GHz to 1 GHz |
0.7 GHz to 1 GHz |
Type |
RF Power MOSFET |
RF Power MOSFET |
Factory Pack Quantity |
60 |
100 |
Vgs - Gate-Source Voltage |
13 V |
13 V |
Vgs th - Gate-Source Threshold Voltage |
1.9 V |
1.9 V |
Packaging |
Tube |
Reel |