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BLF6G10LS-135RN:11

Description
RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin
Categorysemiconductor    Discrete semiconductor   
File Size966KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF6G10LS-135RN:11 Overview

RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin

BLF6G10LS-135RN:11 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current32 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance100 mOhms
TechnologySi
Gain21 dB
Output Power26.5 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502B-3
PackagingTube
ConfigurationSingle
Operating Frequency0.7 GHz to 1 GHz
TypeRF Power MOSFET
Factory Pack Quantity60
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V

BLF6G10LS-135RN:11 Related Products

BLF6G10LS-135RN:11 BLF6G10LS-135R118
Description RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin RF MOSFET Transistors LDMOS TNS
Product Attribute Attribute Value Attribute Value
Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS Details Details
Transistor Polarity N-Channel N-Channel
Id - Continuous Drain Current 32 A 32 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Rds On - Drain-Source Resistance 100 mOhms 100 mOhms
Technology Si Si
Gain 21 dB 21 dB
Output Power 26.5 W 26.5 W
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-502B-3 SOT-502B-3
Configuration Single Single
Operating Frequency 0.7 GHz to 1 GHz 0.7 GHz to 1 GHz
Type RF Power MOSFET RF Power MOSFET
Factory Pack Quantity 60 100
Vgs - Gate-Source Voltage 13 V 13 V
Vgs th - Gate-Source Threshold Voltage 1.9 V 1.9 V
Packaging Tube Reel

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