AMMP-6425
18-28 GHz 1W Power Amplifier
in SMT Package
Data Sheet
Description
The AMMP-6425 MMIC is a broadband 1W power
amplifier in a surface mount package designed for use
in transmitters that operate in various frequency bands
between 18GHz and 28GHz. At 25GHz, it provides 31dBm
of output power (P-1dB) and 25dB of small-signal gain
from a small easy-to-use device. The device has input
and output matching circuitry for use in 50Ω environ-
ments. The AMMP-6425 also integrates a temperature
compensated RF power detection circuit that enables
power detection of 0.25V/W. DC bias is simple and the
device operates on widely available 5V for current supply
(negative voltage only needed for Vg). It is fabricated in
a PHEMT process for exceptional power and gain perfor-
mance.
Features
•
5x5 mm Surface Mount Package
•
Wide Frequency Range 18-28GHz
•
One watt output power
•
50 Ω match on input and output
Specifications (Vd=5V, Idq=650mA)
•
Frequency range 18 to 28 GHz
•
Small signal Gain of 22dB
•
Output power @P-1 of 28dBm (Typ.)
•
Input/Output return-loss of -12dB
Applications
•
Microwave Radio systems
•
Satellite VSAT, DBS Up/Down Link
•
LMDS & Pt-Pt mmW Long Haul
•
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
•
WLL and MMDS loops
Package Diagram
Vg
1
Vd
2
DET_O
3
RF IN
8
4
RF OUT
•
Commercial grade military
Functional Block Diagram
7
Vg
6
Vd
5
DET_R
8
4
1
2
3
Pin
1
2
3
4
5
6
7
8
Function
Vg
Vd
DET_O
RF_out
DET_R
Vd
Vg
RF_in
Note:
1. This MMIC uses depletion mode pHEMT devices. Negative supply is
used for DC gate biasing.
7
6
5
PACKAGE
BASE
GND
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A): 60V
ESD Human Body Model (Class 0): 200V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6425 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy +/-1.5dB for Gain and
P1dB, except Gain at 18 GHz with measurement accuracy +/-1.8dB.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=5.0V, Idq=650mA, Vg=-1.1V, Zo=50 Ω
18GHz
Parameter
Operational Frequency
Small Signal Gain, Gain
Output Power at 1dBGain Compression,
P1dB
Output Third Order Intercept Point,
OIP3
Reverse Isolation, Isolation
Input Return Loss, RLin
Output Return Loss, RLout
23GHz
Typ
23
28
35
43
10
10
28GHz
Typ
23
28
35
43
10
10
Min
18
21
26
Max
28
Min
18
21
27
Max
28
Min
18
20
27
Typ
22
28
35
43
10
10
Max
28
Unit
GHz
dB
dBm
dBm
dB
dB
dB
Comment
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tch) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Drain Supply Current, Idq
Gate Supply Voltage, Vg
Min.
Typical
650
-1.1
Max.
Unit
mA
V
Comments
Vd = 5V, Vg set for typical Idq Typical
Idq = 650mA
2
Table 3. Thermal Properties
Parameter
Thermal Resistance
(Channel-to-Base Plate), Rqch-b
Channel temperature, Tch
Maximum Power Dissipation
Thermal Resistance
(channel to backside),
qjc
Tbaseplate = 85°C
Vd = 5V
Id = 650mA
P
D
= 3.25W
Tbaseplate = 85°C
Vd = 5V
Id = 900mA
Pout = 30dBm
Pd = 3.5W
Tbaseplate = 85°C
qjc
= 17.8 °C/W
Tch = 143 °C
Pd = 410
Tch = 143°C
qjc
= 17.8 °C/W
Tch = 147 °C
Test Conditions
Value
Rqch-b= 17.8°C/W
Tch =142.8°C
Channel Temperature, Tch
Note:
Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8°C. In
this condition, the channel temperature reached at the maximum operational channel temperature of 155°C. To maintain the maximum operational
temperature below 155°C, the base plate temperature must be maintained below 85°C.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Pin
Drain to Gate Voltage, Vd-Vg
Drain Supply Voltage, Vd
Gate Supply Voltage, Vg
Power Dissipation, Pd
[2,3]
RF CW Input Power, Pin
[3]
Channel Temperature, Tch, max
[4]
Storage Case Temperature, Tstg
Maximum Assembly Temperature, Tmax
-65
-2.5
Min.
Max.
8
5.5
0.5
4
20
+150
+155
320
Unit
V
V
V
W
dBm
°C
°C
°C
Comments
CW
30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85 C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
3
AMMP-6425 Typical Performance
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(T
A
= 25°C, Vd=5V, Idq=650mA, V
g
=-1.1 V, Z
in
= Z
out
= 50Ω)
30
25
20
15
10
5
0
-50
Return Loss [dB]
S21[dB]
S12[dB]
-30
S21[dB]
S12[dB]
0
S11[dB]
-5
-10
-15
-20
-25
S22[dB]
15
17
19
21
23
25
27
Frequency [GHz]
29
31
33
35
15
17
19
21
23
25
27
Frequency [GHz]
29
31
33
35
Figure 1. Typical Gain and Reverse Isolation
Figure 2. Typical Input & Output Return Loss
35
30
25
Po[dBm], and, PAE[%]
35
30
25
20
15
10
5
0
-20
-15
-10
-5
0
Pin [dBm]
5
1200
1000
800
600
400
200
0
15
-200
Ids [mA]
P-1, P-3 [dBm], PAE[%]
20
15
10
5
0
18
19
20
21
22
23
24
Frequency[GHz]
25
26
27
28
P-1
PAE, @P-1
P-3
PAE, @P-3
Pout
PAE
I
d
10
Figure 3. Typical P-1 and PAE
Figure 4. Typical Pout, Ids, and PAE vs. Pin at Freq=25GHz
50
10
8
Noise Figure [dB]
45
IP3[dBm]
6
4
2
0
40
35
30
16
18
20
22
24
26
28
30
17
19
21
Figure 5. Typical IP3 (Third Order Intercept) @Pin=-20dBm
Frequency [GHz]
Figure 6. Typical Noise Figure
23
25
Frequency [GHz]
27
29
31
4
0.5
0.4
Det_R - Det_O [V]
0.3
0.2
0.1
0.0
1
0
S22_20
-5
Det_R - Det_O [V]
S22_-40
S22_85
-10
S22[dB]
-15
-20
0.1
0.01
0
5
10
15
Pout[dBm]
20
25
30
0.001
-25
15
20
25
Frequency[GHz]
30
35
Figure 7. Typical Detector voltage vs. Output Power
0
-5
-10
S11_20
S11_-40
S11_85
Figure 8. Typical S22 over temperature
34
32
30
28
P-1 [dBm]
26
24
S11[dB]
-15
-20
-25
22
20
16
18
20
22
24
Frequency [GHz]
26
P-1_85deg
P-1_20deg
P-1_-40deg
28
30
15
20
25
Frequency[GHz]
30
35
Figure 9. Typical S11 over temperature
30
Figure 10. Typical P-1 over temperature
25
S21[dB]
20
S21_20
15
S21_-40
S21_85
10
15
20
25
Frequency[GHz]
30
35
Figure 11. Typical Gain over temperature
5
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