d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. T
C
= 25 °C
S17-1665-Rev. D, 06-Nov-17
Document Number: 64722
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615DN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
=-250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -20 A
V
GS
= -4.5 V, I
D
= -15 A
V
GS
= -2.5 V, I
D
= -10 A
V
DS
= -10 V, I
D
= -20 A
MIN.
-20
-
-
-0.4
-
-
-
-30
-
-
-
-
-
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -10 A
f = 1 MHz
V
DD
= -10 V, R
L
= 1
,
I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
-
-
-
-
-
-
0.4
-
-
-
-
-
V
DD
= -10 V, R
L
= 1
,
I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= -4 A, V
GS
= 0 V
-
-
-
-
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
-
-
-
TYP.
-
-13
3.7
-
-
-
-
-
0.0031
0.0043
0.0076
70
6000
780
820
122
62
9.4
17.2
2
35
38
75
28
13
8
80
10
-
-
-0.68
36
25
15
21
MAX.
-
-
-
-1.2
± 100
-1
-10
-
0.0039
0.0055
0.0098
-
-
-
-
183
93
-
-
4
60
65
130
55
25
16
150
20
-35
-80
-1.1
55
40
-
-
ns
nC
pF
S
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
Forward transconductance
a
Dynamic
b
a
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1665-Rev. D, 06-Nov-17
Document Number: 64722
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
=10 V thru 3 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
T
C
= 125 °C
6
T
C
= 25 °C
4
T
C
= -55 °C
2
10
Vishay Siliconix
48
32
V
GS
= 2 V
16
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
0
0.0
0.6
1.2
1.8
2.4
V
GS
- Gate-to-Source Voltage (V)
3.0
Output Characteristics
0.020
8500
Transfer Characteristics
Ciss
R
DS(on)
- On-Resistance (Ω)
0.016
C - Capacitance (pF)
6800
0.012
V
GS
= 2.5 V
0.008
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.000
0
16
32
48
I
D
- Drain Current (A)
64
80
5100
3400
Coss
1700
Crss
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 10 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
8
1.5
I
D
= 20 A
1.3
Capacitance
V
GS
= 2.5 V
V
GS
= 10 V
6
V
DS
= 15 V
1.1
4
V
DS
= 20 V
2
0.9
0.7
0
0
25
50
75
100
125
Q
g
- Total Gate Charge (nC)
0.5
-50
-25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
S17-1665-Rev. D, 06-Nov-17
Document Number: 64722
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
Vishay Siliconix
0.025
I
D
= 20 A
0.020
10
I
S
- Source Current (A)
T
J
= 25 °C
1
0.015
0.1
0.010
T
J
= 125 °C
0.005
T
J
= 25 °C
0.01
0.001
0
0.000
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
9
10
Source-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
100
0.6
I
D
= 250 µA
V
GS(th)
Variance (V)
0.4
Power (W)
80
60
0.2
I
D
= 1 mA
40
0.0
20
-0.2
-0.4
-50
-25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
100
Threshold Voltage
100
Limited by R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
T
A
= 25 °C
single pulse
BVDSS
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1665-Rev. D, 06-Nov-17
Document Number: 64722
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7615DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
80
I
D
- Drain Current (A)
60
Package limited
40
20
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating
a
65
2.0
52
1.6
Power (W)
Power (W)
0
25
50
75
100
125
150
39
1.2
26
0.8
13
0.4
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1665-Rev. D, 06-Nov-17
Document Number: 64722
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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