IGBT
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Other features | STANDARD SPEED |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 34 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE |
| Maximum landing time (tf) | 1200 ns |
| Gate emitter threshold voltage maximum | 5.5 V |
| Gate-emitter maximum voltage | 20 V |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 225 |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 100 W |
| Maximum power dissipation(Abs) | 100 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | GENERAL PURPOSE SWITCHING |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 2700 ns |
| Nominal on time (ton) | 61 ns |
| VCEsat-Max | 2.2 V |
| Base Number Matches | 1 |
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