TQP369184
RFMD + TriQuint = Qorvo
DC – 6 GHz Gain Block
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
General Purpose Wireless
SOT-363 Package
Product Features
DC – 6000 MHz
Flat, broadband frequency response
20.3 dB Gain at 1900 MHz
3.9 dB Noise Figure at 1900 MHz
+28.5 dBm Output IP3 at 1900 MHz
+15.5 dBm P1dB at 1900 MHz
50 Ohm Cascadable Gain Block
Single Supply, 45 mA Current
SOT-363 Package
Functional Block Diagram
General Description
The TQP369184 is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 1900 MHz, the amplifier typically
provides 20.3 dB gain, +28.5 dBm OIP3, and 3.9 dB
Noise Figure while drawing 45 mA current. The device
combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85 °C. The device is housed
in a lead-free/green/RoHS-compliant industry-standard
SOT-363 package.
The TQP369184 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology.
Only DC-blocking capacitors, a bias
resistor, and an inductive RF choke are required for
operation.
This broadband MMIC amplifier can be directly applied
to various current and next generation wireless
technologies such as CDMA, W-CDMA, and LTE. In
addition, the TQP369184 will work for other applications
within the DC to 6 GHz frequency range.
Pin Configuration
Pin No.
3
6
1, 2, 4, 5
Label
RF IN
RF OUT
GND
Ordering Information
Part No.
TQP369184
TQP369184-PCB
Description
InGaP/GaAs HBT Gain Block
500-6000 MHz Evaluation Board
Standard T/R size = 3000 pieces on a 7” reel
Datasheet Rev. F 06-21-15
© 2015 TriQuint Semiconductor, Inc
-
1 of 8
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
TQP369184
RFMD + TriQuint = Qorvo
DC – 6 GHz Gain Block
Recommended Operating Conditions
Parameter
T
CASE
Tj for >10
6
hours MTTF
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T=25
°
C
Device Voltage (V
CC
)
Rating
−55 to 150 °C
+24 dBm
+4.5 V
Min
−40
Typ
Max Units
+105
+160
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
I
CC
=45
mA, T
CASE
= +25 °C, 50Ω system
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Device Voltage (V
CC
)
Device Current (I
CC
)
Thermal Resistance (θ
jc)
Conditions
Min
DC
18.8
Typ
1900
20.3
15
24
+15.5
+28.5
3.9
3.9
45
Max
6000
21.8
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
°C/W
Pout=0 dBm/tone, Δf= 1 MHz
+25.5
3.0
4.5
226
Junction to case
(1)
Notes:
1.
Thermal path is from the device junction through the package ground tab (pins 2,4) to the backside mounting
surface.
Datasheet Rev. F 06-21-15
© 2015 TriQuint Semiconductor, Inc
-
2 of 8
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
TQP369184
RFMD + TriQuint = Qorvo
DC – 6 GHz Gain Block
S-Parameters
Test Conditions: V
CC
=+3.9
V (typ.), I
CC
=45
mA (typ.), T
CASE
=+25
°
C, 50
Ω system, calibrated to device leads
Freq (MHz)
10
20
50
100
200
500
900
1000
1500
1900
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11 (dB)
-32.5
-31.3
-30.7
-29.9
-27.9
-23.9
-20.3
-19.9
-17.2
-15.7
-15.1
-12.4
-10.0
-9.0
-8.5
-9.1
-10.8
-14.5
-22.4
S11 (ang)
-177.9
178.1
168.6
152.6
131.8
102.6
77.3
73.3
47.4
26.3
21.0
-5.3
-17.9
-24.3
-27.4
-27.6
-26.9
-28.1
-51.2
S21 (dB)
22.6
22.6
22.6
22.6
22.5
22.3
21.9
21.8
21.1
20.5
20.3
19.4
18.5
17.6
16.9
16.5
16.2
16.1
15.9
S21 (ang)
179.6
179.2
178.0
176.2
172.5
162.2
149.2
145.9
131.1
120.0
117.4
105.2
94.3
85.2
77.1
69.6
61.0
51.2
39.3
S12 (dB)
-24.1
-24.0
-24.2
-24.1
-24.2
-24.2
-24.2
-24.1
-24.2
-24.2
-24.2
-24.4
-24.7
-24.9
-24.9
-25.0
-24.9
-24.8
-24.9
S12 (ang)
0.9
0.4
0.0
-0.4
0.7
1.7
2.6
3.4
4.1
5.1
5.5
6.5
7.3
8.7
12.1
14.4
17.4
20.0
20.7
S22 (dB)
-35.7
-41.7
-58.8
-54.6
-60.3
-41.7
-45.1
-52.6
-39.7
-26.2
-24.6
-18.2
-14.6
-12.9
-12.9
-14.7
-20.0
-25.7
-17.1
S22 (ang)
85.5
59.7
111.5
-176.0
133.2
104.5
135.2
109.9
-28.7
-35.1
-39.5
-46.9
-43.4
-40.9
-36.9
-31.4
-16.1
73.4
126.2
Notes:
1. Measured on TQP369184-PCB with L1 removed and C2, C3 replaced with 0Ω resistors.
2. Bias applied to device output via internal network analyzer wide-band bias tee.
3. SOLT Ecal at network analyzer test cable ends.
4. Input and output reference planes extended to the device leads.
Datasheet Rev. F 06-21-15
© 2015 TriQuint Semiconductor, Inc
-
3 of 8
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
TQP369184
RFMD + TriQuint = Qorvo
DC – 6 GHz Gain Block
TQP369184-PCB Evaluation Board
J4
J3
J3 Vcc
R1
24
C1
L1
R1
J4 GND
C1
C2
Q1
C3
J1
RF
Input
C2
3
0.018 uF
L1
39 nH
C3
Q1
6
1,2,4,5
J2
RF
Output
56 pF
56 pF
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
2. All components are of 0603 size unless otherwise stated.
Bill of Material − TQP369184-PCB
Reference Des.
Q1
C1
C2, C3
L1
R1
Value
n/a
0.018 uF
56 pF
39 nH
24 Ω
Description
High Linearity LNA Gain Block
Cap, Chip, 0603, 16V, X7R, 10%
Cap, Chip, 0603, 50V, NPO, 5%
Inductor, 0603, 5%, CS Series
Res, Chip, 0805, 1/10W, 5%
Manuf.
TriQuint
various
various
Coilcraft
various
Part Number
TQP369184
0603CS-39NXJL
Component Values for Specific Frequencies
Frequency (MHz)
L1
C2, C3
50
820 nH
.018 uF
500
220 nH
1000 pF
900
68 nH
100 pF
1900
27 nH
68 pF
2200
22 nH
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
Bias Resistor Values for Various Supply Voltages
V
SUPPLY
(V)
R1
Component Size
5
24 Ω
0805
6
47 Ω
1206
7
68 Ω
1210
8
91 Ω
1210
9
110 Ω
1210
10
130 Ω
2010
12
180 Ω
2010
Datasheet Rev. F 06-21-15
© 2015 TriQuint Semiconductor, Inc
-
4 of 8
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
TQP369184
RFMD + TriQuint = Qorvo
DC – 6 GHz Gain Block
Typical Performance − TQP369184-PCB
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, R
1
= 24 Ω, I
CC
= 45 mA, T
CASE
= +25°C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
Noise Figure
500
22.2
20
15
+16.4
+30.0
3.8
900
22.0
32
21
+16.2
+29.8
3.8
1900
20.3
15
24
+15.5
+28.5
3.9
Typical Value
2100
20.0
13
18
+15.5
+28.4
3.9
2600
19.0
10
14
+15.5
+27.4
4.0
3500
17.6
9
13
+15.3
+27.4
4.2
4000
16.9
9
13
+14.4
+26.5
4.1
5000
16.2
11
20
+13.6
+23.3
3.9
6000
15.9
22
17
+11.4
+23.4
4.2
Units
MHz
dB
dB
dB
dBm
dBm
dB
Notes:
1. OIP3 measured with two tones at an output power of 0 dBm / tone separated by 1 MHz.
Performance Plots − TQP369184-PCB
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, R
1
= 24 Ω, I
CC
= 45 mA, T
CASE
= +25
°
C
Gain vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss (dB)
25
0
0
Output Return Loss vs. Frequency
Input Return Loss (dB)
20
-10
-10
Gain (dB)
15
10
+85
°
C
+25
°
C
−40
°
C
-20
5
0
0
1000
2000
3000
4000
5000
6000
-30
+85
°
C
+25
°
C
−40
°
C
-20
-30
+85
°
C
+25
°
C
−40
°
C
-40
0
1000
2000
3000
4000
5000
6000
-40
0
1000
2000
3000
4000
5000
6000
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
32
OIP3 vs. Pout/tone over Temp
Freq =1900 MHz
1 MHz Tone Spacing
18
17
16
P1dB vs. Temperature
Freq.=1900 MHz
30
P1dB vs. Frequency
Temp.=+25°C
30
25
20
15
10
P1dB (dBm)
28
26
24
15
14
13
12
+85
°
C
+25
°
C
−40
°
C
P1dB (dBm)
OIP3 (dBm)
5
0
-40
-15
10
35
60
85
22
-3
-2
-1
0
1
2
3
0
1000
2000
3000
4000
5000
6000
Pout/Tone (dBm)
Temperature (deg. C)
Frequency (MHz)
40
OIP3 vs. Frequency
1 MHz tone spacing
Pout=0 dBm.per tone
8
NF vs. Frequency
Temp.=+25°C
Temp.=+25°C
35
6
30
25
20
OIP3 (dBm)
NF (dB)
0
1000
2000
3000
4000
5000
6000
4
2
15
10
0
0
1000
2000
3000
4000
5000
6000
Frequency (MHz)
Frequency (MHz)
Datasheet Rev. F 06-21-15
© 2015 TriQuint Semiconductor, Inc
-
5 of 8
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
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