TSUS4400
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm):
∅
3
• Peak wavelength:
λ
p
= 950 nm
• High reliability
• Angle of half intensity:
ϕ
= ± 18°
• Low forward voltage
94 8636
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS4400
I
e
(mW/sr)
15
ϕ
(deg)
± 18
λ
p
(nm)
950
t
r
(ns)
800
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS4400
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
2
170
100
-40 to + 85
-40 to +100
260
300
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 01-Aug-14
Document Number: 81054
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS4400
www.vishay.com
Vishay Semiconductors
180
120
100
80
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
21316
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
60
40
20
0
0
10
20 30 40
50 60 70 80
90 100
R
thJA
= 300 K/W
21315
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Breakdown voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 100 mA
V
R
= 5 V
I
R
= 100 μA
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
V
(BR)
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
7
5
40
30
15
140
20
-0.8
± 18
950
50
0.2
800
400
800
400
2.1
35
MIN.
TYP.
1.3
2.2
-1.3
100
MAX.
1.7
UNIT
V
V
mV/K
μA
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 1.8, 01-Aug-14
Document Number: 81054
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS4400
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10
1
I
e
- Radiant Intensity (mW/sr)
10
1
10
2
1000
I
F
- Forward Current (A)
t
p
/T = 0.01, I
FM
= 2 A
0.02
10
0
0.05
0.1
0.2
0.5
10
-1
10
-2
10
-1
10
0
100
10
1
0.1
10
0
94 7982
94 7947
t
p
- Pulse Duration (ms)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Intensity vs. Forward Current
10
4
10
3
10
2
10
1
10
0
10
-1
94 7996
1000
I
F
- Forward Current (mA)
Φ
e
- Radiant Power (mW)
0
1
2
3
4
100
10
1
0.1
10
0
94 7980
V
F
- Forward Voltage (V)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
V
F rel
- Relative Forward Voltage (V)
1.6
1.1
I
F
= 10 mA
1.0
0.9
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
0
-10 0 10
94 7993
50
100
140
94 7990
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.8, 01-Aug-14
Document Number: 81054
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSUS4400
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
1.25
Φ
e rel
- Relative Radiant Power
1.0
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.75
0.5
0.25
I
F
= 100 mA
0
900
950
λ
- Wavelength (nm)
1000
0.6
94 7983
0.4
0.2
0
0.2
0.4
0.6
94 7994
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
Ø 3.2 ± 0.15
R1.4 (sphere)
3.4 ± 0.15
4.4 ± 0.3
(2.5)
< 0.6
34.4 ± 0.5
5.8 ± 0.3
AREA NOT PLANE
Ø 2.9 ± 0.15
+ 0.15
1.5 ± 0.5
+ 0.2
0.5
- 0.1
0.4
- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Rev. 1.8, 01-Aug-14
Document Number: 81054
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000