SGK7785-30A datasheet, PDF - EEWORLD Datasheet

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SGK7785-30A: DescriptionRF Power Field-Effect Transistor,; CategoryThe transistor; File Size399KB，6 Pages; ManufacturerSUMITOMO; Websitehttps://global-sei.com/

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SGK7785-30A Overview

RF Power Field-Effect Transistor,

SGK7785-30A Parametric

Parameter Name	Attribute value
Maker	SUMITOMO
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Base Number Matches	1

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SGK7785-30A

C-Band Internally Matched GaN-HEMT

FEATURES



High Output Power: P5dB=45.0dBm (Typ.)



High Gain: GL=12.0dB (Typ.)



High P.A.E.:

add=39%

(Typ.)



Broad Band: 7.7 to 8.5GHz



Impedance Matched Zin/Zout = 50ohm



Hermetically Sealed Package

DESCRIPTION

The SGK7785-30A is a high power GaN-HEMT that is

internally matched for standard communication bands to

provide optimum power and gain in a 50ohm system.

ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

stg

Rating

-10

86.5

-55 to +125

+250

Unit

deg.C

RECOMMENDED OPERATING CONDITION

Item

Drain-Source Voltage

Forward Gate Current

Reverse Gate Current

Channel Temperature

Symbol

Rg=100ohm

Condition

Limit

<=24

<=6.1

>=-3.2

<+192

Unit

deg.C

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)

Item

Saturated Drain Current

Trans Conductance

Pinch-off Voltage

Output Power

at 5dB G.C.P.

Linear Gain

at Pin=23dBm

Drain Current

at 5dB G.C.P.

Power Added Efficiency at 3dB G.C.P.

Symbol

DSS

5dB

DSR



add

G

T

IBK

YES

Class 1C

=10V,

=24V,

=10V,

Condition

=0V

=1.3A

=1.3mA

Limit

Min.

44.0

11.0

Typ.

6.5

3.0

-3

45.0

12.0

2.7

-45.0

2.2

4.0

1.2

2.6

150

Max.

Unit

dBm

dBc

deg.C/W

deg.C

=24V(Typ.)

DSDC

=1.75A(Typ.)

f=7.7 to 8.5 GHz

f=7.7GHz, 8.5GHz

f=10MHz,

2-tone Test

Pout=29.5dBm (S.C.L.)

Channel to Case

x I

DSR

– P

out

+ P

) x R

Gain Flatness

Order Inter modulation

Distortion

Thermal Resistance

Channel Temperature Rise

CASE STYLE

RoHS Compliance

ESD

-40.0

G.C.P. : Gain Compression Point,

S.C.L. : Single Carrier Level

1000V to <2000V

Note :

Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)

Edition 1.3

Aug. 2014

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