BGS13PN10
SP3T high linearity, high power RF Switch
Data Sheet
Revision 1.0 - 2016-09-27
Final
Power Management & Multimarket
Edition 2016-09-27
Published by
Infineon Technologies AG
81726 Munich, Germany
c 2012 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
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including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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BGS13PN10
Confidential
Revision History
Document No.:
BGS13PN10.pdf
Revision History:
-
Previous Version:
0.6
Page
5
8
9
Subjects (major changes since last revision)
Updated Title
Updated RF characteristics for RF1 and RF3
Added RF characteristics for RF2
Trademarks of Infineon Technologies AG
AURIX
TM
, C166
TM
, CanPAK
TM
, CIPOS
TM
, CIPURSE
TM
,CoolGaN
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,CoolMOS
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, CoolSET
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, CoolSiC
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, CORECONTROL
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,
DAVE
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,EasyPIM
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, EiceDRIVER
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, eupec
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,
FCOS
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, HITFET
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, HybridPACK
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, ISOFACE
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, I
2
RF
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, IsoPACK
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, MIPAQ
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, SmartLEWIS
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, TEMPFET
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, thinQ!
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, TriCore
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,
TRENCHSTOP
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.
Other Trademarks
Advance Design System
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(ADS) of Agilent Technologies, AMBA
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, ARM
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, MULTI-ICE
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, REALVIEW
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of ARM Limited, UK. AUTOSAR
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is licensed by AUTOSAR development partnership. Bluetooth
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of Bluetooth
SIG Inc. CAT-iq
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of DECT Forum. COLOSSUS
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of Trimble Navigation Ltd. EMV
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of EMVCo, LLC (Visa
Holdings Inc.). EPCOS
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of Epcos AG. FLEXGO
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of Microsoft Corporation. FlexRay
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is licensed by FlexRay Consortium.
HYPERTERMINAL
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of Hilgraeve Incorporated. IEC
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of Commission Electrotechnique Internationale. IrDA
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of Infrared Data
Association Corporation. ISO
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of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB
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of MathWorks,
Inc. MAXIM
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of Maxim Integrated Products, Inc. MICROTEC
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, NUCLEUS
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of Mentor Graphics Corporation. Mifare
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of
NXP. MIPI
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of MIPI Alliance, Inc. MIPS
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of MIPS Technologies, Inc., USA. muRata
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of MURATA MANUFACTURING CO.,
MICROWAVE OFFICE
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(MWO) of Applied Wave Research Inc., OmniVision
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of OmniVision Technologies, Inc. Openwave
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Openwave Systems Inc. RED HAT
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Red Hat, Inc. RFMD
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RF Micro Devices, Inc. SIRIUS
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of Sirius Sattelite Radio Inc.
SOLARIS
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of Sun Microsystems, Inc. SPANSION
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of Spansion LLC Ltd. Symbian
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of Symbian Software Limited. TAIYO
YUDEN
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of Taiyo Yuden Co. TEAKLITE
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KAISHA TA. UNIX
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of X/Open Company Limited. VERILOG
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of Cadence Design Systems, Inc. VLYNQ
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of
Texas Instruments Incorporated. VXWORKS
TM
, WIND RIVER
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of WIND RIVER SYSTEMS, INC. ZETEX
TM
of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet
3
Revision 1.0 - 2016-09-27
BGS13PN10
Confidential
Contents
Contents
1 Features
2 Product Description
3 Maximum Ratings
4 Operation Ranges
5 Logic Table
6 RF Characteristics for RF1 and RF3
7 RF Characteristics for RF2
8 RF large signal parameter
9 Package Outline and Pin Configuration
5
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10
12
List of Figures
1
2
3
4
5
6
BGS13PN10 block diagram . .
Pinout (top view) . . . . . . . .
Package Dimensions Drawing .
Land pattern and stencil mask
Marking . . . . . . . . . . . . .
Tape drawing . . . . . . . . . .
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List of Tables
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Ordering Information . . . . .
Maximum Ratings, Table I . .
Maximum Ratings, Table II . .
Operation Ranges . . . . . .
Logic Table . . . . . . . . . .
RF Specifications . . . . . . .
RF Specifications . . . . . . .
RF large signal Specifications
RF large signal Specifications
Logic Table . . . . . . . . . .
Logic Table . . . . . . . . . .
Logic Table . . . . . . . . . .
Pin description . . . . . . . .
Mechanical data . . . . . . .
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Data Sheet
4
Revision 1.0 - 2016-09-27
BGS13PN10
Confidential
BGS13PN10 SP3T high linearity, high power RF Switch
1 Features
•
High max RF power: 40 dBm CW @ 900 MHz, room tempera-
ture
•
Three ultra-low loss ports:
0.19 dB @ f=0.9 GHz,
P
IN
=38 dBm
0.24 dB @ f=1.9 GHz,
P
IN
=38 dBm
0.26 dB @ f=2.7 GHz,
P
IN
=33 dBm
1.06 dB @ f=3.6 GHz,
P
IN
=33 dBm
1.62 dB @ f=5.5 GHz,
P
IN
=33 dBm
•
No DC decoupling components required, if no external DC is
applied on RF ports
•
High ESD robustness
•
Low harmonic generation
•
High linearity
All 3 RF ports 76 dBm IIP3
•
No power supply blocking required
•
Supply voltage range: 1.8 to 3.6 V
•
No insertion loss change within supply voltage range
•
No linearity change within supply voltage range
•
Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
•
0.5 to 6.0 GHz coverage
•
Small form factor 1.1 mm x 1.5 mm
•
400
µm
pad pitch
•
RoHS and WEEE compliant package
2 Product Description
The BGS13PN10 is a Single Pole Triple Throw (SP3T) RF antenna aperture switch optimized for mobile phone
applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS
or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch
maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors
at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type
BGS13PN10
Package
TSNP10-1
Marking
3P
Chip
M4821B
Data Sheet
5
Revision 1.0 - 2016-09-27
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