MOSFET SF2 800V 3.4OHM E DPAK
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | ON Semiconductor |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 2 A |
Rds On - Drain-Source Resistance | 3.4 Ohms |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 20 V, 30 V |
Qg - Gate Charge | 7.4 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 32 W |
Channel Mode | Enhancement |
Packaging | Cut Tape |
Packaging | MouseReel |
Packaging | Reel |
Height | 2.39 mm |
Length | 6.73 mm |
Width | 6.22 mm |
Forward Transconductance - Min | 2 S |
Fall Time | 14 ns |
Rise Time | 6.4 ns |
Factory Pack Quantity | 2500 |
Typical Turn-Off Delay Time | 22.7 ns |
Typical Turn-On Delay Time | 10 ns |
Unit Weight | 0.009184 oz |