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FCD3400N80Z

Description
MOSFET SF2 800V 3.4OHM E DPAK
Categorysemiconductor    Discrete semiconductor   
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FCD3400N80Z Overview

MOSFET SF2 800V 3.4OHM E DPAK

FCD3400N80Z Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current2 A
Rds On - Drain-Source Resistance3.4 Ohms
Vgs th - Gate-Source Threshold Voltage2.5 V
Vgs - Gate-Source Voltage20 V, 30 V
Qg - Gate Charge7.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation32 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.39 mm
Length6.73 mm
Width6.22 mm
Forward Transconductance - Min2 S
Fall Time14 ns
Rise Time6.4 ns
Factory Pack Quantity2500
Typical Turn-Off Delay Time22.7 ns
Typical Turn-On Delay Time10 ns
Unit Weight0.009184 oz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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