Advanced Technical Information
IXKR 47N60C5
V
DSS
= 600 V
I
D25
= 47 A
R
DS(on) max
= 45 mΩ
CoolMOS
™ 1)
Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
DSon
, high V
DSS
MOSFET
Ultra low gate charge
G
S
D
ISOPLUS247
TM
G
D
S
isolated back
surface
E72873
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AS
E
AR
dV/dt
T
C
= 25°C
T
C
= 90°C
single pulse
repetitive
I
D
= 11 A; T
C
= 25°C
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
47
32
1950
3
50
V
V
A
A
mJ
mJ
V/ns
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS
™ 1)
power MOSFET 4
th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
mΩ
V
µA
µA
nA
pF
pF
190
nC
nC
nC
ns
ns
ns
ns
0.45
with heatsink compound
0.25
K/W
K/W
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1)
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Symbol
wiConditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
40
2.5
T
VJ
= 25°C
T
VJ
= 150°C
3
50
100
6800
320
150
35
50
30
20
100
10
max.
45
3.5
10
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCH
V
GS
= 10 V; I
D
= 44 A
V
DS
= V
GS
; I
D
= 3 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 44 A
V
GS
= 10 V; V
DS
= 400 V
I
D
= 44 A; R
G
= 3.3
Ω
CoolMOS
™
is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
20080523b
© 2008 IXYS All rights reserved
1-4
Advanced Technical Information
IXKR 47N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
I
S
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0 V
I
F
= 44 A; V
GS
= 0 V
I
F
= 44 A; -di
F
/dt = 100 A/µs; V
R
= 400 V
0.9
600
17
60
typ.
max.
44
1.2
A
V
ns
µC
A
Component
Symbol
T
VJ
T
stg
V
ISOL
F
C
Symbol
Conditions
operating
storage
I
ISOL
= 1 mA, 50/60 Hz, t = 1 min
mounting force with clip
Conditions
Maximum Ratings
-55...+150
-55...+150
2500
20-120
°C
°C
V~
N
Characteristic Values
min.
typ.
30
max.
C
P
d
S
, d
A
d
S
, d
A
Weight
coupling capacity between shorted
pins and mounting tab in the case
pF
mm
mm
pin - pin
pin - backside metal
tbd
tbd
6
g
IXYS reserves the right to change limits, test conditions and dimensions.
20080523b
© 2008 IXYS All rights reserved
2-4
Advanced Technical Information
IXKR 47N60C5
ISOPLUS247
TM
Outline
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff--
f
oberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of
device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC
außer Schraubloch und L
max
.
This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD
except screw hole and except L
max
.
350
250
T
J
= 25°C
300
V
GS
=
20 V
10 V 8 V
140
T
J
= 150°C
7V
8V
7V
10 V
120
200
250
V
GS
=
20 V
100
6V
5.5 V
150
200
80
I
D
[A ]
P
tot
[ W]
6V
I
D
[A ]
60
150
100
5.5 V
5V
100
40
4.5 V
50
50
5V
20
4.5 V
0
0
40
80
T
C
[°C]
120
160
0
0
5
10
15
20
0
0
5
10
15
20
V
DS
[V]
V
DS
[V]
Fig. 1 Typ. power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
20080523b
© 2008 IXYS All rights reserved
3-4
Advanced Technical Information
IXKR 47N60C5
320
0.16
0.12
T
JV
= 150°C
V
DS
=
5 V
5.5 V
6V
6.5 V
7V
I
D
= 44 A
V
GS
= 10 V
0.1
V
DS
> 2·R
DS(on) max
· I
D
280
25 °C
0.12
240
0.08
200
[Ω]
[Ω]
20 V
DS (on)
0.08
DS (on)
0.06
98 %
typ
I
D
[A ]
160
150 °C
R
R
120
0.04
0.04
0.02
T
J
=
80
40
0
0
20
40
60
80
100
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
I
D
[A]
T
j
[°C]
V
GS
[V]
Fig. 4 Typ. drain-source on-state
resistance
10
3
Fig. 5 Drain-source on-state resistance
Fig. 6 Typ. transfer characteristics
12
10
5
I
D
= 11 A pulsed
10
4
V
GS
= 0 V
f = 1 MHz
10
Ciss
V
DS
= 50 V
10
2
T
J
=
150 °C
25 °C
150 °C, 98%
8
12 V
0
40 0V
10
3
[V ]
C [pF ]
I
F
[A ]
Coss
V
GS
6
25 °C, 98%
10
4
2
10
1
10
2
1
Crss
10
0
0
0
0.5
1
1.5
2
10
0
50
100
150
0
0
50
100
150
200
V
SD
[V]
Q
gate
[nC]
V
DS
[V]
Fig. 7 Forward characteristic
of reverse diode
Fig. 8
Typ. gate charge
Fig. 9 Typ. capacitances
2000
700
10
0
I
D
= 11 A
I
D
= 0.25 mA
1500
660
0.5
10
-1
[V ]
Z
thJ C
[ K /W ]
[m J ]
0.2
E
AS
1000
B R (DS S )
D = t
p
/T
620
0.1
V
0.05
10
500
580
-2
0.02
0.01
single pulse
0
20
60
100
140
180
540
-60
-20
20
60
100
140
180
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
T
j
[°C]
T
j
[°C]
t
p
[s]
Fig. 9 Avalanche energy
Fig. 10 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 12 Max. transient thermal
impedance
20080523b
© 2008 IXYS All rights reserved
4-4
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