B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
+
~
• Ideal for printed circuit boards
• High case dielectric strength
• High surge current capability
~
+
−
~
~
−
Case Style WOG
e4
• Typical I
R
less than 0.1 μA
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 0.9 A
T
J
max.
Diode variations
WOG
0.9 A
65 V, 125 V, 200 V, 400 V, 600 V
45 A
10 μA
1.0 V
125 °C
Quad
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case:
WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Silver plated
J-STD-002 and JESD22-B102
Polarity:
As marked on body
leads,
solderable
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R- and C-load
Maximum average forward output current
for free air operation at T
A
= 45 °C
Maximum non-repetitive peak voltage
Maximum DC blocking voltage
Maximum peak working voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on rated load
Rating for fusing at T
J
= 125 °C (t < 100 ms)
Minimum series resistor C-load at V
RMS
= ± 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
+ 50 %
- 10 %
R- and L-load
C-load
SYMBOL
V
RRM
V
RMS
I
F(AV)
V
RSM
V
DC
V
RWM
I
FRM
I
FSM
I
2
t
R
T
C
L
T
J
T
STG
1.0
5000
2.0
2500
100
65
90
200
125
180
B40
C800G
65
40
B80
C800G
125
80
B125
C800G
200
125
0.9
0.8
350
200
300
10
45
10
4.0
1000
- 40 to + 125
- 40 to + 150
8.0
500
12
200
600
400
600
1000
600
900
B250
C800G
400
250
B380
C800G
600
380
UNIT
V
V
A
V
V
V
A
A
A
2
s
μF
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum reverse current at rated
repetitive peak voltage per diode
TEST CONDITIONS
0.9 A
SYMBOL
V
F
I
R
B40
C800G
B80
C800G
B125
C800G
1.0
10
B250
C800G
B380
C800G
UNIT
V
μA
Revision: 08-Jul-13
Document Number: 88534
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
B40
C800G
B80
C800G
B125
C800G
36
11
B250
C800G
B380
C800G
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
SYMBOL
R
JA
R
JL
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22"
(5.5 mm x 5.5 mm) copper pads
ORDERING INFORMATION
(Example)
PREFERRED P/N
B380C800G-E4/51
UNIT WEIGHT (g)
1.12
PREFERRED PACKAGE CODE
51
BASE QUANTITY
100
DELIVERY MODE
Plastic bag
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.0
50
Bridge Output Full Wave Rectified
Current Average (A)
Peak Forward Surge Current (A)
50 to 60 Hz
Resistive or Inductive Load
T
J
= 25 °C
10 ms Single Sine-Wave
40
0.8
Capacitive Load
0.6
0 - 10 µF
10 - 100 µF
> 100 µF
30
0.4
0.375"
(9.5 mm)
P.C.B.
20
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
10
1.0 Cycle
0
0
0
20
40
60
80
100
120
140
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 50 Hz
Fig. 1 -
Derating Curves Output Rectified Current for
B40C800G...B125C800G
Fig. 3 -
Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Bridge Output Full Wave Rectified
Current Average (A)
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0.6
Instantaneous Forward Surge Current (A)
1.0
100
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
0 - 10 µF
10 - 100 µF
> 100 µF
1
0.4
0.375"
(9.5 mm)
P.C.B.
0.1
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0
0
20
40
60
80
100
120
140
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 -
Derating Curves Output Rectified Current for
B250C800G...B380C800G
Fig. 4 -
Typical Forward Characteristics Per Diode
Revision: 08-Jul-13
Document Number: 88534
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
Instantaneous Reverse Current (µA)
1
T
J
= 100 °C
Junction Capacitance (pF)
80
100
10
0.1
T
J
= 25 °C
0.01
0
20
40
60
1
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 -
Typical Reverse Characteristics Per Diode
Fig. 6 -
Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.060 (1.52)
0.020 (0.51)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Revision: 08-Jul-13
Document Number: 88534
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000