MUN2216T1G datasheet, PDF - EEWORLD Datasheet

MUN2216T1G: DescriptionBipolar Transistors - Pre-Biased SS BR XSTR NPN 50V; CategoryDiscrete semiconductor The transistor; File Size121KB，11 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	318D-04
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.338 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.25 V
Base Number Matches	1

	MUN2216T1G	SMUN2216T1G
Description	Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V	NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL, Automotive Qualified
Brand Name	ON Semiconductor	onsemi
Is it lead-free?	Lead free	Lead free
Parts packaging code	SC-59	SC-59 3 LEAD
package instruction	SMALL OUTLINE, R-PDSO-G3	HALOGEN FREE AND ROHS COMPLIANT, CASE 318D-04, SC-59, 3 PIN
Contacts	3	3
Manufacturer packaging code	318D-04	318D-04
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	4 weeks
Other features	BUILT IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160	160
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.338 W	0.338 W
surface mount	YES	YES
Terminal surface	Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	0.25 V	0.25 V

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