SRAM
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Renesas Electronics Corporation |
Parts packaging code | DIP |
package instruction | DIP-28 |
Contacts | 28 |
Reach Compliance Code | not_compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 150 ns |
I/O type | COMMON |
JESD-30 code | R-GDIP-T28 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 |
Maximum seat height | 5.92 mm |
Maximum standby current | 0.00015 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.048 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT APPLICABLE |
width | 15.24 mm |
Base Number Matches | 1 |
HM1-65642/883 | |
---|---|
Description | SRAM |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Renesas Electronics Corporation |
Parts packaging code | DIP |
package instruction | DIP-28 |
Contacts | 28 |
Reach Compliance Code | not_compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 150 ns |
I/O type | COMMON |
JESD-30 code | R-GDIP-T28 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 |
Maximum seat height | 5.92 mm |
Maximum standby current | 0.00015 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.048 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT APPLICABLE |
width | 15.24 mm |
Base Number Matches | 1 |