SPD04N60S5BTMA1 datasheet, PDF

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SPD04N60S5BTMA1: DescriptionMOSFET LOW POWER_LEGACY; CategoryDiscrete semiconductor The transistor; File Size722KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SPD04N60S5BTMA1 Overview

MOSFET LOW POWER_LEGACY

SPD04N60S5BTMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	not_compliant
Other features	AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Efficiency Rating (Eas)	130 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	0.95 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	9 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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SPU04N60S5

SPD04N60S5

Cool MOS™ Power Transistor

Feature

•

New revolutionary high voltage technology

•

Ultra low gate charge

•

Periodic avalanche rated

•

Extreme dv/dt rated

•

Ultra low effective capacitances

•

Improved transconductance

DS(on)

PG-TO252

600

0.95

4.5

PG-TO251

Ω

Type

Package

Ordering Code

SPU04N60S5

SPD04N60S5

PG-TO251

PG-TO252

Q67040-S4228

Q67040-S4202

Marking

04N60S5

Maximum Ratings

Parameter

Continuous drain current

= 25 °C

= 100 °C

Symbol

Value

4.5

2.8

Unit

Pulsed drain current,

limited by

jmax

Avalanche energy, single pulse

= 3.4 A,

= 50 V

D puls

130

0.4

4.5

±20

Avalanche energy, repetitive

limited by

jmax

= 4.5 A,

= 50 V

Avalanche current, repetitive

limited by

jmax

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation,

= 25°C

°C

tot

j ,

stg

-55... +150

Operating and storage temperature

Rev. 2.5

Page 1

2008-04-08

SPD04N60S5BTMA1 Related Products

	SPD04N60S5BTMA1	SPD04N60S5	SPU04N60S5	SPU04N60S5BKMA1	SPD04N60S5XT
Description	MOSFET LOW POWER_LEGACY	Switching Voltage Regulators 93% Eff Buck-Boost Converter	MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS S5	MOSFET N-CH 600V 4.5A TO-251	Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
Maker	Infineon	Infineon	Infineon	Infineon	Infineon
Parts packaging code	TO-252AA	TO-252AA	TO-251AA	TO-251AA	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	GREEN, PLASTIC, TO-251, IPAK-3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3
Reach Compliance Code	not_compliant	compliant	not_compliant	not_compliant	compliant
Other features	AVALANCHE RATED, HIGH VOLTAGE	AVALANCHE RATED, HIGH VOLTAGE	AVALANCHE RATED, HIGH VOLTAGE	AVALANCHE RATED, HIGH VOLTAGE	AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Efficiency Rating (Eas)	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V	600 V	600 V
Maximum drain current (ID)	4.5 A	4.5 A	4.5 A	4.5 A	4.5 A
Maximum drain-source on-resistance	0.95 Ω	0.95 Ω	0.95 Ω	0.95 Ω	0.95 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-251AA	TO-251AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	2	2	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	9 A	9 A	9 A	9 A	9 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Lead free	-	Contains lead	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	-
Shell connection	DRAIN	DRAIN	-	-	DRAIN
Base Number Matches	1	1	-	-	1

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