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71V424L15YGI

Description
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Categorystorage    storage   
File Size73KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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71V424L15YGI Overview

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

71V424L15YGI Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOJ
package instructionSOJ, SOJ36,.44
Contacts36
Manufacturer packaging codePBG36
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J36
JESD-609 codee3
length23.5 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ36,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum standby current0.01 A
Minimum standby current3 V
Maximum slew rate0.145 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1

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