IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
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Thank you for your cooperation and understanding,
WeEn Semiconductors
NXPS20S100CX
Dual power Schottky diode
30 January 2013
Product data sheet
1. General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT186A (TO-220F) "full pack" plastic package.
2. Features and benefits
•
•
•
•
•
High junction temperature capability
Isolated package
Low leakage current
Negligible switching losses
Optimised design to give low V
F
and high T
j(max)
3. Applications
•
•
•
•
DC to DC converters
Freewheeling diode
OR-ing diode
Switched mode power supply rectifier
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
I
O(AV)
T
j
V
F
I
R
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
h
≤ 134 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
-
-
-
-
20
175
A
°C
Conditions
Min
-
-
Typ
-
-
Max
100
10
Unit
V
A
TO
-2
20F
average output current δ = 0.5 ; square-wave pulse; both
diodes conducting
junction temperature
Static characteristics
forward voltage
reverse current
I
F
= 3 A; T
j
= 125 °C;
Fig. 6
V
R
= 100 V; T
j
= 25 °C;
Fig. 7
-
-
0.53
-
0.58
3
V
µA
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NXP Semiconductors
NXPS20S100CX
Dual power Schottky diode
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
n.c.
anode 1
cathode
anode 2
mb; isolated
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
NXPS20S100CX
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
7. Marking
Table 4.
Marking codes
Marking code
NXPS20S100CX
Type number
NXPS20S100CX
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
I
F(AV)
I
O(AV)
I
FSM
Parameter
repetitive peak reverse voltage
average forward current
average output current
non-repetitive peak forward
current
δ = 0.5 ; T
h
≤ 134 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; square-wave pulse; both
diodes conducting
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
© NXP B.V. 2013. All rights reserved
Conditions
Min
-
-
-
-
Max
100
10
20
150
Unit
V
A
A
A
NXPS20S100CX
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Product data sheet
30 January 2013
2 / 10
NXP Semiconductors
NXPS20S100CX
Dual power Schottky diode
Symbol
T
stg
T
j
12
P
tot
(W)
Parameter
storage temperature
junction temperature
Conditions
Min
-65
-
Max
175
175
003aak782
Unit
°C
°C
003aak781
8
P
tot
(W)
6
2.8
4.0
4
1.9
2.2
δ=1
a = 1.57
0.5
8
0.2
0.1
4
2
0
0
4
8
12
I
F(AV)
(A)
16
0
0
2
4
6
8
10
I
F(AV)
(A)
Fig. 1.
Forward power dissipation as a function of
Fig. 2.
average forward current; square waveform; per
diode; maximum values
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
12
I
F(AV)
(A)
8
003aak784
134 °C
10
4
I
FSM
(A)
10
3
003aak785
4
10
2
P
t
p
t
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
heatsink temperature; per diode; maximum
values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform; per
diode; maximum values
NXPS20S100CX
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© NXP B.V. 2013. All rights reserved
Product data sheet
30 January 2013
3 / 10
NXP Semiconductors
NXPS20S100CX
Dual power Schottky diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
10
Z
th(j-h)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting
in free air
Min
-
-
-
Typ
-
-
55
Max
5
4
-
Unit
K/W
K/W
K/W
R
th(j-a)
003aak787
10
-1
δ = 0.5
10
-2
δ = 0.3
δ = 0.1
δ = 0.05
10
-3
δ = 0.02
δ = 0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
1
P
δ=
t
p
T
t
T
t
p
(s)
10
10
-4
10
-6
Fig. 5.
Transient thermal impedance from junction to heatsink as a function of pulse width; per diode; maximum
values
10. Isolation characteristics
Table 7.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz < f < 60 Hz; sinusoidal
waveform ; RH ≤ 65 %; clean and
dust free; from all terminals to external
heatsink
from cathode to external heatsink ;
f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
NXPS20S100CX
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© NXP B.V. 2013. All rights reserved
Product data sheet
30 January 2013
4 / 10
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