技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-75R12MS4
EconoDUAL™2模块采用第二高速IGBT和碳化硅二极管针对高频应用带有温度检测NTC
EconoDUAL™2modulewiththefastIGBT2forhigh-frequencyswitchingandNTC
V
CES
= 1200V
I
C nom
= 75A / I
CRM
= 150A
典型应用
•
高频开关应用
电气特性
•
高短路½力，自限制短路电流
•
½开关损耗
•
V
CEsat
带正温度系数
机械特性
•
高功率密度
•
绝缘的基板
•
标封装
TypicalApplications
• HighFrequencySwitchingApplication
ElectricalFeatures
•
High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• LowSwitchingLosses
• V
CEsat
withpositiveTemperatureCoefficient
MechanicalFeatures
• HighPowerDensity
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-10-03
revision:3.1
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:MK
approvedby:RO
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-75R12MS4
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 65°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150
V
CES
1200
75
100
150
500
+/-20
min.
I
C
= 75 A, V
GE
= 15 V
I
C
= 75 A, V
GE
= 15 V
I
C
= 3,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 7,5
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 7,5
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 7,5
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 7,5
Ω
I
C
= 75 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, di/dt = 2100 A/µs
R
Gon
= 7,5
Ω
I
C
= 75 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, du/dt = 2100 V/µs
R
Goff
= 7,5
Ω
V
GE
≤
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
4,5
typ.
3,20
3,85
5,5
0,80
5,0
5,10
0,30
0,12
0,13
0,05
0,06
0,31
0,36
0,02
0,03
5,00
9,00
2,60
3,80
max.
3,75
6,5
1,0
400
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
V
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
t
r
t
d off
t
f
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
t
P
≤
10 µs, T
vj
= 125°C
450
0,115
A
0,25 K/W
K/W
125
°C
preparedby:MK
approvedby:RO
dateofpublication:2013-10-03
revision:3.1
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-75R12MS4
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 75 A, V
GE
= 0 V
I
F
= 75 A, V
GE
= 0 V
I
F
= 75 A, - di
F
/dt = 2100 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
I
F
= 75 A, - di
F
/dt = 2100 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
I
F
= 75 A, - di
F
/dt = 2100 A/µs (T
vj
=125°C)
V
R
= 600 V
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
1200
75
150
2450
typ.
2,00
1,70
43,0
62,0
4,50
13,0
1,70
4,70
0,255
125
max.
2,55
V
V
A
A
µC
µC
mJ
mJ
V
A
A
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
0,55 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
-5
typ.
5,00
3375
3411
3433
max.
5
20,0
kΩ
%
mW
K
K
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:MK
approvedby:RO
dateofpublication:2013-10-03
revision:3.1
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-75R12MS4
模块/Module
绝缘测试电压
Isolationtestvoltage
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳－散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
重量
Weight
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
V
ISOL
CTI
min.
R
thCH
L
sCE
R
CC'+EE'
T
stg
M
M
G
-40
3,00
3,0
2,5
Cu
Al
2
0
3
12,0
14,0
10,4
14,0
> 200
typ.
0,02
30
2,20
-
-
200
125
6,00
5,0
max.
K/W
nH
mΩ
°C
Nm
Nm
g
kV
mm
mm
preparedby:MK
approvedby:RO
dateofpublication:2013-10-03
revision:3.1
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-75R12MS4
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
T
vj
=125°C
150
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
V
GE
=15V
150
135
120
105
90
I
C
[A]
75
60
45
30
15
0
T
vj
= 25°C
T
vj
= 125°C
135
120
105
90
I
C
[A]
75
60
45
30
15
0
V
GE
= 8V
V
GE
= 9V
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
V
CE
[V]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
V
CE
[V]
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
I
C
=f(V
GE
)
V
CE
=20V
150
135
120
105
90
75
60
45
30
15
0
T
vj
= 25°C
T
vj
= 125°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
E
on
=f(I
C
),E
off
=f(I
C
)
V
GE
=±15V,R
Gon
=7.5Ω,R
Goff
=7.5Ω,V
CE
=600V
27
24
21
18
15
12
9
6
3
0
E
on
, T
vj
= 125°C
E
off
, T
vj
= 125°C
5
6
7
8
9
V
GE
[V]
10
11
12
E [mJ]
I
C
[A]
0
25
50
75
I
C
[A]
100
125
150
preparedby:MK
approvedby:RO
dateofpublication:2013-10-03
revision:3.1
5
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