2N5246_D74Z datasheet, PDF - EEWORLD Datasheet

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2N5246_D74Z: DescriptionRF JFET Transistors NCh RF Transistor; Categorysemiconductor Discrete semiconductor; File Size24KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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2N5246_D74Z Overview

RF JFET Transistors NCh RF Transistor

2N5246_D74Z Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	RF JFET Transistors
RoHS	Details
Transistor Type	JFET
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 30 V
Id - Continuous Drain Current	7 mA
Maximum Drain Gate Voltage	30 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	350 mW
Mounting Style	Through Hole
Package / Case	TO-92-3
Packaging	Ammo Pack
Configuration	Single
Height	5.33 mm
Length	5.2 mm
Product	RF JFET
Type	JFET
Width	4.19 mm
Forward Transconductance - Min	0.003 S to 0.0095 S
Gate-Source Cutoff Voltage	- 0.5 V to - 4 V
Factory Pack Quantity	2000
Unit Weight	0.007090 oz

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2N5246

N-Channel RF Amplifier

• This device is designed for HF/VHF mixer/amplifier and applications

where process 50is not adequate. Sufficient gain and low noise for

sensitive receivers.

• Sourced from process 90.

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings*

=25°C unless otherwise noted

Symbol

, T

STG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Parameter

Ratings

-30

-55 ~ 150

Units

°C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

=25°C unless otherwise noted

Symbol

Off Characteristics

(BR)GSS

GSS

GS(off)

DSS

gfs

goss

Parameter

Test Condition

= 1.0µA, V

= 0

= 25V, V

= 0

= 15V, I

= 1.0nA

= 15V, V

= 0

= 0V, V

= 15V, f = 1.0kHz

= 0V, V

= 15V, f = 1.0kHz

-0.5

1.5

3000

Min.

-30

-1.0

-4.0

7.0

9500

Max.

Units

µmhos

Gate-Source Breakdwon Voltage

Gate Reverse Current

Gate-Source Cutoff Voltage

Zero-Gate Voltage Drain Current *

Forward Transferconductance

Common- Source Output Conductance

On Characteristics

Small Signal Characteristics

* Pulse Test: Pulse

≤

300µs

Thermal Characteristics

=25°C unless otherwise noted

Symbol

θJC

θJA

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

350

2.8

125

357

Units

mW/°C

°C/W

Rev. A, October 2003

2N5246_D74Z Related Products

	2N5246_D74Z
Description	RF JFET Transistors NCh RF Transistor
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	RF JFET Transistors
RoHS	Details
Transistor Type	JFET
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 30 V
Id - Continuous Drain Current	7 mA
Maximum Drain Gate Voltage	30 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	350 mW
Mounting Style	Through Hole
Package / Case	TO-92-3
Packaging	Ammo Pack
Configuration	Single
Height	5.33 mm
Length	5.2 mm
Product	RF JFET
Type	JFET
Width	4.19 mm
Forward Transconductance - Min	0.003 S to 0.0095 S
Gate-Source Cutoff Voltage	- 0.5 V to - 4 V
Factory Pack Quantity	2000
Unit Weight	0.007090 oz

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