DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
PH2369
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 27
2004 Oct 11
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package.
PINNING
PIN
1
2
3
emitter
base
collector
PH2369
DESCRIPTION
1
handbook, halfpage
2
3
3
2
1
MAM182
Fig.1
Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PH2369
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
15
4.5
200
300
100
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Oct 11
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 20 V; I
E
= 0 A
V
CB
= 20 V; I
E
= 0 A; T
j
= 125
°C
V
EB
= 4 V; I
C
= 0 A
V
CE
= 1 V; I
C
= 10 mA
V
CE
= 1 V; I
C
= 10 mA; T
amb
=
−55 °C
V
CE
= 2 V; I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
t
on
t
off
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
V
CB
= 5 V; I
E
= i
e
= 0 A; f = 1 MHz
V
EB
= 1 V; I
C
= i
c
= 0 A; f = 1 MHz
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA; I
Boff
=
−1.5
mA;
see Fig.2 test conditions A
MIN.
−
−
−
40
20
20
−
700
−
−
500
−
−
−
−
−
−
I
Con
= 100 mA; I
Bon
= 40 mA; I
Boff
=
−20
mA;
−
see Fig.2 test conditions B
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
PH2369
UNIT
K/W
MAX.
400
30
100
120
−
−
250
850
4
4.5
−
UNIT
nA
µA
nA
mV
mV
pF
pF
MHz
Switching times (between 10 % and 90 % levels)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
turn-on time
turn-off time
10
4
6
20
10
10
13
35
ns
ns
ns
ns
ns
ns
ns
ns
2004 Oct 11
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PH2369
V
BB
V
CC
R
B
oscilloscope
V
I
R1
(probe)
450
Ω
R2
R
C
V
o
(probe)
450
Ω
DUT
oscilloscope
mlb826
Test conditions A.
V
i
= 0.5 to 4.2 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Test conditions B.
V
i
= 0.5 to 4.52 V; T = 200
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 100
Ω;
R2 = 68
Ω;
R
B
= 390
Ω;
R
C
= 47
Ω.
V
BB
=
−3
V; V
CC
= 4.6 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Oct 11
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
PH2369
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Oct 11
5
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