VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(MAGN-A-PAK Power Modules), 250 A to 320 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
MAGN-A-PAK
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Type
Package
Circuit
configuration
250 A to 320 A
Modules - diode, high voltage
MAGN-A-PAK
Two diodes doubler circuit,
two diodes common cathode,
two diodes common anode, single diode
DESCRIPTION / APPLICATIONS
This VS-VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode.
These modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
√t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
T
C
CHARACTERISTICS
VSK.250..
250
100
393
7015
7345
246
225
2460
VSK.270..
270
100
424
8920
9430
398
363
3980
400 to 3000
-40 to +150
VSK.320..
320
100
502
10 110
10 580
511
466
5110
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
°C
Revision: 27-Apr-17
Document Number: 93581
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-VSK.250
VS-VSK.270
VS-VSK.320
08
12
16
20
VS-VSK.270
30
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
3000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
3100
50
I
RRM
MAXIMUM
AT 150 °C
mA
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward
current at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t for fusing
I
2
t
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level forward slope resistance
High level forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 %
V
RRM
reapplied
No voltage
reapplied
100 %
V
RRM
reapplied
VALUES
VSK.250 VSK.270 VSK.320
250
100
393
7015
7345
5900
Sinusoidal half wave,
initial
T
J
= T
J
maximum
6180
246
225
174
159
2460
0.79
0.92
0.63
0.49
1.29
270
100
424
8920
9340
7500
7850
398
363
281
257
3980
0.74
0.87
0.94
0.81
1.48
320
100
502
10 110
10 580
8500
8900
511
466
kA
2
s
361
330
5110
0.69
0.86
0.59
0.44
1.28
V
mΩ
kA
2
√s
V
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
π
x I
F(AV)
, T
J
= T
J
maximum, 180° conduction
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted, t = 1 s
TEST CONDITIONS
VALUES
50
3000
UNITS
mA
V
Revision: 27-Apr-17
Document Number: 93581
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum resistance, case to heat sink
per module
Mounting
torque
± 10 %
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and
greased
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow
for the spread of the compound.
0.16
TEST CONDITIONS
VALUES
VSK.250
VSK.270
-40 to +150
0.125
K/W
0.035
4 to 6
Nm
8 to 10
800
30
MAGN-A-PAK
g
oz.
VSK.320
UNITS
°C
Approximate weight
Case style
ΔR
CONDUCTION PER JUNCTION
DEVICE
180°
VSK.250
VSK.270
VSK.320
0.009
0.008
0.008
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.010
0.012
0.010
90°
0.014
0.014
0.013
60°
0.020
0.020
0.020
30°
0.032
0.032
0.032
180°
0.007
0.007
0.007
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.011
0.011
0.011
90°
0.015
0.015
0.015
60°
0.021
0.020
0.020
30°
0.033
0.033
0.033
K/W
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Apr-17
Document Number: 93581
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
300
250
200
150
100
50
0
0
50
100
150
200
250
Average Forward Current (A)
180°
120°
90°
60°
30°
RMSLimit
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
0
50
100
150
200
250
300
Average F
orward Current (A)
30°
Conduction Angle
VSK.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
Conduc tion Angle
60°
90°
120°
180°
VSK.250.. S
eries
T
J
= 150°C
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Maximum Allowable Cas T
e emperature (°C)
140
130
120
110
30°
100
90
80
0
50
VSK.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
Maximum Average F
orward Power Los (W)
s
150
450
400
350
300
250
200 R
MSLimit
150
100
50
0
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
VSK.250.. S
eries
T
J
= 150°C
Conduction Period
Conduction Period
DC
180°
120°
90°
60°
30°
60°
90°
120°
180°
DC
100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum T
ota l Forward Power Loss (W)
600
S
R
th
500
400
300
200
100
0
0
50
VSK.250.. S
eries
Per Junc tion
T
J
= 150°C
180°
(S
ine)
DC
0.
08
K/
0.
W
12
K/
W
A
=
02
0.
W
K/
ta
el
-D
0.2
K/
W
R
0.2
5
K/ W
0. 4
K/ W
0. 6 K
/
W
100 150 200 250 300 350 400
0
T
otal R
MSOutput Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 27-Apr-17
Document Number: 93581
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
0.
08
1200
05
0.
Ma ximum T
otal Power Lo s (W)
s
R
t hS
1000
800
180°
(S
ine)
180°
(R t)
ec
/W
3K
0.0
0.
1
K/
W
K/
W
W
K/
A
K/ W
.01
=0
600
400
200
0.1
6K
/W
e lt
-D
0.2
5K
/W
aR
2 x VSK.250.. S
eries
S
ingle Phase B ge
rid
Connec ted
T
J
= 150°C
0
100
200
300
400
0.35
K/ W
0
0
500
25
50
75
100
125
150
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
1800
Maximum T
otal Power Loss (W)
04
0.
2
0.0
R
th
1600
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800
0
0.
06
0.
08
W
K/
A
S
W
K/
K/
W
/W
5K
.00
=0
120°
(Rec t)
K/
W
K/
W
0.1
6K
/W
0.25
K/ W
0.35 K
/W
0.1
2
e lt
-D
aR
3 x VSK.250.. S
eries
T
hree Phase Brid ge
Connec ted
T
J
= 150°C
25
50
75
100
125
150
T
otal Outp ut Current (A)
Maximum Allowab le Ambient T
emp era ture (°C)
Fig. 7 - Forward Power Loss Characteristics
Peak Half S Wave Forward Current (A)
ine
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1
At Any Ra ted Loa d Cond ition And With
Rated V
R
RM
Ap p lied Following Surge.
Initia l T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Peak Half S
ine Wave Forward Current (A)
6500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 150°C
No Voltage Reapp lied
R ted V
RRM
Rea pplied
a
VSK.250.. S
eries
Per Junc tion
10
100
VSK.250.. S
eries
Per Junc tion
0.1
Pulse T
rain Duration (s)
1
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 27-Apr-17
Document Number: 93581
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
