13000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
Maker | Hittite Microwave(ADI) |
package instruction | DIE OR CHIP |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Other features | LOW NOISE |
Characteristic impedance | 50 Ω |
structure | COMPONENT |
Gain | 16 dB |
Maximum input power (CW) | -5 dBm |
JESD-609 code | e4 |
Number of functions | 1 |
Maximum operating frequency | 25000 MHz |
Minimum operating frequency | 13000 MHz |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -55 °C |
Encapsulate equivalent code | DIE OR CHIP |
power supply | 3/5 V |
RF/Microwave Device Types | WIDE BAND LOW POWER |
technology | GAAS |
Terminal surface | Gold (Au) |
HMC342 | HMC342_07 | |
---|---|---|
Description | 13000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | 13000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
structure | COMPONENT | COMPONENT |
Maximum operating frequency | 25000 MHz | 25000 MHz |
Minimum operating frequency | 13000 MHz | 13000 MHz |
Maximum operating temperature | 85 °C | 85 Cel |
Minimum operating temperature | -55 °C | -55 Cel |