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FZTA42TC

Description
Darlington Transistors NPN High Voltage
CategoryDiscrete semiconductor    The transistor   
File Size103KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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FZTA42TC Overview

Darlington Transistors NPN High Voltage

FZTA42TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE
3
SEPTEMBER 2007
7
ISSUE 2 – NOVEMBER 93
FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
FZTA42
C
E
COMPLIMENTARY TYPE – FZTA92
PARTMARKING DETAIL – DEVICE TYPE IN FULL
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
tot
T
j
:T
stg
VALUE
300
300
5
100
500
2
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
300
300
5
0.1
0.1
0.5
0.9
25
40
40
50
6
MHz
pF
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 302

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