Bipolar Transistors - Pre-Biased PRE-BIAS NPN 200mW
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| DDTC144TCA-7 | DDTC123TCA-7 | DDTC125TCA-7 | DDTC114TCA-7 | DDTC124TCA-7 | |
|---|---|---|---|---|---|
| Description | Bipolar Transistors - Pre-Biased PRE-BIAS NPN 200mW | Bipolar Transistors - Pre-Biased PRE-BIAS NPN 200mW | Bipolar Transistors - Pre-Biased 200MW 200KW | Bipolar Transistors - Pre-Biased PRE-BIAS NPN 200mW | Bipolar Transistors - Pre-Biased PRE-BIAS NPN 200mW |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 100 | 100 | 100 | 100 | 100 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 235 | 235 | 235 | 235 | 235 |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 10 | 10 | 10 | 10 | 10 |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| Maker | Diodes Incorporated | - | Diodes Incorporated | - | Diodes Incorporated |
| Base Number Matches | - | 1 | 1 | 1 | - |
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