TLP350
TOSHIBA Photocoupler
GaAℓAs IRED + Photo IC
TLP350
Industrial Inverter
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
IH(Induction Heating)
The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an
integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.
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•
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Peak output current : I
O
= ±2.5A (max)
Guaranteed performance over temperature :
−40
to 100°C
Supply current : I
CC
= 2 mA (max)
Power supply voltage: V
CC
= 15 to 30 V
Threshold input current : I
FLH
= 5 mA (max)
Switching time (t
pLH
/t
pHL
) : 500 ns (max)
Common mode transient immunity : 15 kV/μs
Isolation voltage : 3750 Vrms
UL Recognized : UL1577,File No.E67349
Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
Please designate “Option(D4)”
: 6000V
PK
(Note):When a EN 60747-5-2 approved type is needed,
TOSHIBA
11-10C4
Unit: mm
Weight: 0.54 g (typ.)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration
(top view)
1
2
3
4
8
7
6
5
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: V
O
(output)
7: NC
8: V
CC
Schematic
(Tr1)
I
F
2+
V
F
3−
(Tr2)
I
CC
8
V
CC
I
O
6
V
O
5
GND
A 0.1
μF
bypass capacitor must be connected
between pins 8 and 5. (See Note 6)
1
2007-10-01
TLP350
Absolute
Maximum Ratings
(Ta
=
25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
85°C)
LED
Peak transient forward current
Reverse voltage
Junction temperature
“H” peak output current
Detector
“L” peak output current
Supply voltage
Supply voltage Derating
Junction temperature
Operating frequency
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H.
≤
60%)
(Note 4)
(Note 5)
(Note 3)
Ta
= −40
to 100°C
(Note 2)
Ta < 95 °C
Ta
≥
95 °C
(Note 1)
Symbol
I
F
ΔI
F
/ΔTa
I
FP
V
R
T
j
I
OPH
I
OPL
V
CC
ΔV
CC
/ΔTa
T
j
f
T
stg
T
opr
T
sol
BV
S
Rating
20
−0.54
1
5
125
−2.5
2.5
35
-1.0
125
50
−55
to 125
−40
to 100
260
3750
Unit
mA
mA/°C
A
V
°C
A
A
V
V /℃
°C
kHz
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P
W
≤
1
μs,
300 pps
Note 2: Exponential waveform pulse width P
W
≤
0.3μs, f
≤
15kHz
Note 3: Exponential waveform I
OPH
≥
-2.0A (≤ 0.3μs), I
OPL
≤
2.0A (≤ 0.3μs)
Note 4: At 2 mm or more from the lead root.
Note 5: This device is regarded as a two terminal device: pins 1, 2, 3 and 4 are shorted together, as are pins 5, 6, 7
and 8.
Note 6: A ceramic capacitor(0.1
μF)
should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristic
Input current, ON
Input voltage, OFF
Supply voltage
Peak output current
Operating temperature
(Note 7)
Symbol
I
F (ON)
V
F (OFF)
V
CC
I
OPH
/I
OPL
T
opr
Min
7.5
0
15
⎯
−40
Typ.
⎯
⎯
⎯
⎯
⎯
Max
10
0.8
30
±2.0
100
Unit
mA
V
V
A
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time)
<
0.5
μs.
Note 8: If the rising slope of the supply voltage (VCC) for the detector is steep, stable operation of the internal
circuits cannot be guaranteed.
Be sure to set 3.0V/μs or less for a rising slope of the VCC.
2
2007-10-01
TLP350
Electrical Characteristics
(Ta
= −40
to 100°C, unless otherwise specified)
Characteristic
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Symbol
V
F
∆V
F
/∆Ta
I
R
C
T
Test
Circuit
⎯
⎯
⎯
⎯
Test Conditions
I
F
=
10 mA, Ta
=
25°C
I
F
=
10 mA
V
R
=
5 V, Ta
=
25°C
V
=
0 , f
=
1 MHz,Ta
=
25°C
V
CC
=
30 V,I
F
=
5 mA
“H” Level
Output current
(Note 9)
“L” Level
I
OPL
2
I
OPH
1
V
8-6
=
-3.5 V
V
CC
=
15 V,I
F
=
5 mA
V
8-6
=
-7.0 V
V
CC
=
30 V,I
F
=
0 mA
V
6-5
=
2.5V
V
CC
=
15 V,I
F
=
0 mA
V
6-5
=
7.0V
“H” Level
Output voltage
“L” Level
Supply current
Threshold input current
Threshold input voltage
Supply voltage
UVLO threshhold
UVLO hysteresis
“H” Level
“L” Level
L
→
H
H
→
L
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
CC
V
UVLO+
V
UVLO-
UVLO
HYS
4
5
6
⎯
⎯
⎯
⎯
⎯
―
V
OH
3
V
CC 1
=
+15 V
V
EE 1
=
-15 V
R
L
= 200
Ω
V
CC
=
30 V
V
O
open
V
F
=
0.8 V
I
F
=
10 mA
I
F
=
0 mA
⎯
⎯
⎯
⎯
0.8
15
11.0
9.5
―
-14.9
1.3
1.3
1.8
⎯
⎯
12.5
11.0
1.5
-12.5
2.0
2.0
5
⎯
30
13.5
12.0
―
mA
mA
V
I
F
=
5 mA
Min
⎯
⎯
⎯
⎯
⎯
Typ.*
1.6
−2.0
⎯
45
−1.6
Max
1.8
⎯
10
250
-1.0
Unit
V
mV/°C
μA
pF
⎯
1.0
⎯
1.6
-2.0
A
⎯
2.0
11
⎯
13.7
⎯
⎯
V
V
CC
= 15V , V
O
> 1V , Io = 0mA
V
CC
= 15V , V
O
< 1V , Io = 0mA
⎯
V
O
> 2.5 V , I
F
= 5 mA
―
V
V
V
V
*:
All typical values are at Ta
=
25°C
Note 9: Duration of I
O
:
≤
50
μs(1PULSE)
Note 10: This product is more sensitive to static electricity (ESD) than the conventional product because of its
minimal power consumption design.
General static electricity precautions are necessary for handling this component.
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Conditions
V = 0,f = 1MHz
V
S
=
500 V, Ta
=
25°C,
R.H.
≤
60%
AC,1 minute
Isolation voltage
BV
S
AC,1 second,in oil
DC,1 minute,in oil
(Note5)
(Note5)
Min.
⎯
1×10
12
Typ.
1.0
10
14
Max.
⎯
―
―
―
―
Unit
pF
Ω
3750
―
―
―
10000
10000
V
rms
Vdc
3
2007-10-01
TLP350
Switching Characteristics
(Ta
= −40
to 100°C, unless otherwise specified)
Characteristic
L
→
H
H
→
L
Symbol
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
r
t
f
CM
H
8
CM
L
7
Test
Circuit
Test Conditions
V
CC
=
30 V
R
g
=
20
Ω
C
g
=
10 nF
V
CC
=
30 V
R
g
=
20
Ω,
C
g
=
10 nF
V
CC
=
30 V
R
g
=
20
Ω
C
g
=
10 nF
I
F
=
0
→
5 mA
I
F
=
5
→
0 mA
I
F
=
0
→
5 mA
I
F
=
5
→
0 mA
Min
50
50
⎯
⎯
⎯
−15000
15000
Typ.*
260
260
⎯
15
8
⎯
⎯
Max
500
500
350
⎯
⎯
⎯
V/μs
⎯
ns
Unit
Propagation delay time
Switching Time Dispersion
between ON and OFF
Output rise time (10-90%)
Output fall time (90-10%)
Common mode transient immunity
at high level output
Common mode transient immunity
at low level output
I
F
=
5 mA
V
CM
=
1000 Vp-p V
O (min)
=26V
Ta
=
25°C
I
F
=
0 mA
V
CC
=
30 V
V
O (max)
=1V
*:
All typical values are at Ta
=
25°C
Test Circuit 1: I
OPH
1
I
F
4
5
8
V8-6
A I
OPH
V
CC
Test Circuit 2: I
OPL
1
8
I
OPL
A
4
5
V
6-5
V
CC
Test Circuit 3: V
OH
1
I
F
4
5
8
V
CC1
Test Circuit 4: V
OL
1
8
V
CC1
R
L
V
V
OH
V
F
V
EE1
4
R
L
V
V
OL
5
V
EE1
Test Circuit 5: I
CCH
1
I
F
4
8
I
CCH
A
V
CC
5
Test Circuit 6: I
CCL
1
8
I
CCL
A
V
CC
4
5
4
2007-10-01
TLP350
Test Circuit 7: t
pLH
, t
pHL
, t
r
, t
f
, PDD
1
I
F
8
0.1
μF
Vo
Cg
=10
nF
Rg
=
20
Ω
V
CC
I
F
t
r
t
f
V
OH
90
%
50%
10
%
4
V
O
5
t
pLH
t
pHL
V
OL
Test Circuit 8: CM
H
, CM
L
1
8
0.1
μF
V
CM
V
O
V
CC
90
%
10
%
t
r
SW A: I
F
=
5 mA
V
O
SW B: I
F
=
0 mA
1V
26V
CM
L
t
f
CM
H
1000 V
SW
A
B
I
F
4
V
CM
+
−
5
800(
V
)
CM
=
L t
(
μ
s
)
r
CM
H
=
800(
V
)
t f
(
μ
s
)
CM
L
(CM
H
) is the maximum rate of rise (fall) of the common mode voltage that can be
sustained with the output voltage in the low (high) state.
5
2007-10-01
Analog electronics
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