PHOTODIODE
Si photodiode
S6428-01, S6429-01, S6430-01, S7505-01
RGB color sensor
S6428-01, S6429-01 and S6430-01 are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540
nm) and red (λp=660 nm).
S7505-01 use a 3-channel (RGB) photodiode having blue, green and red sensitivities, and is molded into a surface-mountable package.
Features
Applications
S6428-01: 400 to 540 nm (λp=460 nm)
S6429-01: 480 to 600 nm (λp=540 nm)
S6430-01: 590 to 720 nm (λp=660 nm)
l
Insensitive to near IR range
l
High sensitivity
S6428-01: 0.22 A/W Typ. (λ=λp)
S6429-01: 0.27 A/W Typ. (λ=λp)
S6430-01: 0.45 A/W Typ. (λ=λp)
l
Low dark current
l
Plastic package (6 × 8 mm)
l
Spectral response range
S6428-01, S6429-01, S6430-01
l
White balance adjustment
l
Color identification
l
Projector and TV brightness level detection
l
Color control
l
Light source color temperature detection
l
3 ch (RGB) Si photodiode
l
Surface mountable plastic package (9 × 9.6 mm)
l
High sensitivity
s
General ratings / Absolute maximum ratings
Di mensional
outline
Active area
size
(mm)
S6428-01
S6429-01
S6430-01
S7505-01
➀
➁
2.4 × 2.8
Effective active
area
(mm
2
)
6.7
10
Green, red: 2.25
Green, red: 1.5 × 1.5
Blue
: 1.5 × 1.5 (2 elements) Blue
: 4.5
-10 to +60
-20 to +70
Absolute maximum ratings
Storage
Operating
Reverse
temperature temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
S7505-01
Type No.
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral
response sensitivity
range wavelength
λ
λp
(nm)
460
540
660
460
540
620
RELATIVE SENSITIVITY (%)
Type No.
Photo
sensitivity
S
λ=λp
(A/W)
0.22
0.27
0.45
0.18
0.23
0.16
Dark
current
I
D
V
R
=1 V
Typ.
(pA)
5
Max.
(pA)
20
Temp.
coefficient
of
I
D
(times/°C)
Rise time
tr
V
R
=0 V
R
L
=1 kΩ
10 to 90 %
(µs)
(nm)
S6428-01
400 to 540
S6429-01
480 to 600
S6430-01
590 to 720
Blue
400 to 540
S7 50 5-01 Green 480 to 600
Red
590 to 720
*1: All elements.
*2: Defined as shown in the
figure at right.
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Typ. Max.
(pF) (pF)
200
400
300
150
Spectral
response
half width
FWHM *
2
(nm)
90
70
90
90
60
70
1.12
10 *
1
200 *
1
0.5
150
80
100
50
FWHM
WAVELENGTH (nm)
KSPDC0031EA
Si photodiode
S6428-01, S6429-01, S6430-01, S7505-01
s
Spectral response (S7505-01)
0.3
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
s
Spectral response (S6428-01, S6429-01, S6430-01)
0.6
PHOTO SENSITIVITY (A/W)
PHOTO SENSITIVITY (A/W)
0.5
QE=100 %
S6430-01 (Red)
QE=100 %
Green
0.2
0.4
0.3
S6429-01 (Green)
Blue
Red
0.1
0.2
S6428-01 (Blue)
0.1
0
300
400
500
600
700
800
900
1000
1100
1200
0
200
300
400
500
600
700
800
900
1000 1100 1200
WAVELENGTH (nm)
KSPDB0141EC
WAVELENGTH (nm)
KMPDB0217EA
s
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
s
Terminal capacitance vs. reverse voltage
1 nF
(Typ. Ta=25 ˚C)
100 pA
TERMINAL CAPACITANCE
DARK CURRENT
S6428-01, S6429-01, S6430-01
S7505-01
10 pA
100 pF
S7505-01 (Blue)
1 pA
S6428-01, S6429-01
S6430-01
100 fA
0.01
S7505-01 (Red, Green)
0.1
1
10
100
10 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
KSPDB0142EC
REVERSE VOLTAGE (V)
KSPDB0143EC
s
Dimensional outlines (unit: mm)
➀
S6428-01, S6429-01, S6430-01
(8.5)
FILTER
➁
S7505-01
1.5 ± 0.4
INDEX
(C 0.7)
9.0 *
1.5 ± 0.4
3.4±0.3
0.8
(6 ×) 0.4
B B
G R
2.54 2.54
6.0
+0
-
0.3
9.6 *
(2 ×) 10˚
ACTIVE AREA
2.8 × 2.4
ACTIVE AREA
FILTER
PHOTOSENSITIVE
SURFACE
1.5
(2 ×) 10˚
1.5
0.2
2.2
+0
-
0.1
+0.2
4.5
-
0.5
8.0
+0
-
0.1
12.0 ± 0.3
0.7 ± 0.3
(2 ×) 10˚
FILTER
PHOTOSENSITIVE
SURFACE
0.7 ± 0.3
0.3 1.4
1.0
1.5
0.2
0.55
0.85
0.6
Blue Blue
Green Red
0.2
Tolerance unless otherwise
noted: ±0.15
0.1 ± 0.1
1.5
7.8
+0
-
0.1
1.5
(2 ×) 10˚
DETAILS OF
PHOTODIODE
KSPDA0056EA
ANODE (Blue)
CATHODE COMMON
ANODE (Green)
ANODE (Red)
CATHODE COMMON
NC
Tolerance unless otherwise
noted: ±0.1
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
KMPDA0073ED
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1013E04
Jul. 2003 DN
MEMS sensors
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