W39L040AP70B datasheet, PDF - EEWORLD Datasheet

W39L040AP70B: Description512K 】 8 CMOS FLASH MEMORY; Categorystorage storage; File Size220KB，26 Pages; ManufacturerWinbond Electronics Corporation; Websitehttp://www.winbond.com.tw; Environmental Compliance

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W39L040AP70B Overview

512K 】 8 CMOS FLASH MEMORY

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Winbond Electronics Corporation
Parts packaging code	QFJ
package instruction	QCCJ, LDCC32,.5X.6
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	70 ns
startup block	BOTTOM/TOP
command user interface	YES
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	4K words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3.3 V
Certification status	Not Qualified
Maximum seat height	3.56 mm
Department size	64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	11.43 mm

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