N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV
DSX
/
BV
DGX
240V
R
DS(ON)
(max)
4.0Ω
I
DSS
(min)
600mA
Order Number / Package
TO-92
DN2624N3
Die
DN2624ND
E–
LET
SO
OB
–
DN2624
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
8
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSX
BV
DGX
±
20V
-55°C to +150°C
300°C
SGD
TO-92
Note:
See Package Outline section for dimensions.
8-9
DN2624
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
300mA
I
D
(pulsed)
1.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
300mA
I
DRM
1.0A
TE –
SOLE
– OB
Electrical Characteristics
*
I
D
(continuous) is limited by max rated T
j
.
(@ 25°C unless otherwise specified)
Min
240
–1
–3
4.5
100
10
1
Typ
Max
Unit
V
V
mV
nA
µA
mA
mA
4.0
1.1
400
720
100
30
15
22
22
30
30
44
44
60
1.8
600
V
ns
ns
pF
Ω
%/°C
mhos
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Source
Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Conditions
V
GS
= -5V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
DS
= 25V, I
D
= 10µA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 200mA
V
GS
= 0V, I
D
= 200mA
I
D
= 300mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
600
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 10Ω
V
GS
= -10V, I
SD
= 200mA
V
GS
= -10V, I
SD
= 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
90%
INPUT
-10V
R
L
PULSE
GENERATOR
R
gen
OUTPUT
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
D.U.T.
10%
10%
INPUT
OUTPUT
0V
90%
90%
8-10
DN2624
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
ETE –
SOL
– OB
10
8
V
GS
= 0V
On-Resistance vs. Drain Current
BV
DSS
(normalized)
V
GS
= -3.5V
R
DS(on)
(ohms)
-50
0
50
100
150
6
1.0
4
2
0.9
0
0
0.2
0.4
0.6
0.8
1.0
T
J
(°C)
Transfer Characteristics
1.0
T
A
= -55°C
0.8
V
DS
= 10V
T
A
= 25°C
0.6
T
A
= 125°C
1.6
I
D
(amps)
V
(th)
and R
DS
Variation with Temperature
2.0
RDS (ON) @
VGS = 0V, ID = 200mA
1.6
8
V
GS(th)
(normalized)
I
D
(amperes)
1.4
1.2
1.2
0.8
1.0
VGS(OFF) @
VDS = 25V, ID = 10µA
0.8
0.4
0.4
0.2
0
-3
-2
-1
0
1
2
-50
0
50
100
150
0
V
GS
(Volts)
Capacitance Vs. Drain-to-Source Voltage
800
V
GS
= -10V
C
ISS
600
2
4
T
j
(°C)
Gate Drive Dynamic Characteristics
C (picofarads)
V
GS
(volts)
0
VDS = 25V
ID = 30mA
400
700pF
-2
200
-4
C
OSS
C
RSS
0
0
10
20
30
40
-6
0
1
2
3
4
5
620pf
V
DS
(Volts)
Q
C
(Nanocoulombs)
8-11
R
DS(ON)
(normalized)
DN2624
Typical Performance Curves
Output Characteristics
2.0
–
TE –
SOLE
OB
2.0
1.6
Saturation Characteristics
1.6
V
GS
= 1.0V
V
GS
= 1.0V
I
D
(amperes)
1.2
I
D
(amperes)
0.5V
1.2
0.5V
0.8
0V
0.8
0V
0.4
-0.5V
-1.0V
0.4
-0.5V
-1.0V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
2.0
1.0
V
DS
(volts)
Power Dissipation vs. Temperature
V
DS
= 10V
1.6
T
A
= -55°C
0.8
TO-92
G
FS
(siemens)
T
A
= 25°C
T
A
= 125°C
0.8
P
D
(watts)
1.0
1.2
0.6
0.4
0.4
0.2
0
0
0.2
0.4
0.6
0.8
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
TO-92 (pulsed)
1.0
T
A
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
0.1
0.6
TO-92 (DC)
0.4
0.01
0.2
0.001
1
T
A
= 25°C
10
100
1000
TO-92
P
D
= 1.0W
T
A
= 25°C
0.001
0.01
0.1
1
10
0
V
DS
(volts)
t
p
(seconds)
8-12
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