NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
40
R
DS(ON)
28mΩ
I
D
7A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
C
= 25 °C
T
C
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
T
L
LIMITS
40
±20
7
6
40
2
1.3
-55 to 150
275
°C
W
A
UNITS
V
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
SYMBOL
R
θJA
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle
≤
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°C,
Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 32V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
40
1
1.5
3
±100 nA
1
10
µA
V
LIMITS
UNIT
MIN TYP MAX
1
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
On-State Drain Current
1
Drain-Source On-State
Resistance
1
Forward Transconductance
1
I
D(ON)
R
DS(ON)
g
fs
V
DS
= 5V, V
GS
= 10V
V
GS
= 4.5V, I
D
= 6A
V
GS
= 10V, I
D
= 7A
V
DS
= 10V, I
D
= 5A
DYNAMIC
20
30
21
24
42
28
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 20V
I
D
≅
1A, V
GS
= 10V, R
GEN
= 6Ω
V
DS
= 0.5V
(BR)DSS
, V
GS
= 5V,
I
D
= 7A
V
GS
= 0V, V
DS
= 10V, f = 1MHz
790
175
65
16
2.5
2.1
2.2
7.5
4.4
15
nS
nC
pF
11.8 21.3
11
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
I
S
I
SM
V
SD
t
rr
Q
rr
I
F
= Is, V
GS
= 0V
I
F
= 5A, dl
F
/dt = 100A /
µS
15.5
7.9
1.3
2.6
1
A
V
nS
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
TYPICAL PERFORMANCE CHARACTERISTICS
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V
GS
= 0V
10
Is - Reverse Drain Current(A)
T
A
= 125° C
1
25° C
0.1
-55° C
0.01
0.001
0
0.4
0.2
0.6
0.8
1.0
V
SD
- Body Diode Forward Voltage(V)
1.2
1.4
3
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
4
AUG-19-2004
NIKO-SEM
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
SOIC-8(D) MECHANICAL DATA
mm
Dimension
Min.
A
B
C
D
E
F
G
mm
Dimension
Max.
5.0
4.0
6.2
0.51
H
I
J
K
L
1.75
0.25
Typ.
4.9
3.9
6.0
0.445
1.27
Min.
0.5
0.18
Typ.
0.715
0.254
0.22
Max.
0.83
0.25
4.8
3.8
5.8
0.38
0°
4°
8°
1.35
0.1
1.55
0.175
M
N
J
F
D
E
G
I
H
K
B
C
A
5
AUG-19-2004
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