M464S0924DTS-L7C datasheet, PDF

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M464S0924DTS-L7C: Description8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD; Categorystorage storage; File Size87KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M464S0924DTS-L7C Overview

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

M464S0924DTS-L7C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	compli
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	144
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.88 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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M464S0924DTS

M464S0924DTS SDRAM SODIMM

PC133/PC100 SODIMM

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION

The Samsung M464S0924DTS is a 8M bit x 64 Synchronous

Dynamic RAM high density memory module. The Samsung

M464S0924DTS consists of four CMOS 8M x 16 bit with

4banks Synchronous DRAMs in TSOP-II 400mil package and

a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-

epoxy substrate. Three 0.1uF decoupling capacitors are

mounted on the printed circuit board in parallel for each

SDRAM. The M464S0924DTS is a Small Outline Dual In-line

Memory Module and is intended for mounting into 144-pin

edge connector sockets.

Synchronous design allows precise cycle control with the use

of system clock. I/O transactions are possible on every clock

cycle. Range of operating frequencies, programmable laten-

cies allows the same device to be useful for a variety of high

bandwidth, high performance memory system applications.

•

FEATURE

• Performance range

Part No.

M464S0924DTS-L7C/C7C

M464S0924DTS-L7A/C7A

M464S0924DTS-L1H/C1H

M464S0924DTS-L1L/C1L

Max Freq. (Speed)

133MHz (7.5ns @ CL=2)

133MHz (7.5ns @ CL=3)

100MHz (10ns @ CL=2)

100MHz (10ns @ CL=3)

Burst mode operation

Auto & self refresh capability (4096 Cycles/64ms)

LVTTL compatible inputs and outputs

Single 3.3V

0.3V power supply

MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the

system clock

• Serial presence detect with EEPROM

• PCB :

Height (1,000mil)

, double sided component

PIN CONFIGURATIONS (Front side/back side)

Front

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQM0

DQM1

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

Back

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DQM4

DQM5

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

Front

DQ14

DQ15

Back

DQ46

DQ47

Front

DQ21

DQ22

DQ23

A10/AP

DQM2

DQM3

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

**SDA

Back

101

103

105

Voltage Key

107

109

CLK0 62 CKE0 111

113

RAS

CAS 115

68 *CKE1 117

CS0

*A12 119

*CS1 72

*A13 121

74 *CLK1 123

125

127

129

131

DQ16 84 DQ48 133

DQ17 86 DQ49 135

DQ18 88 DQ50 137

DQ19 90 DQ51 139

141

DQ20 94 DQ52 143

96 DQ53

98 DQ54

100 DQ55

102 V

104

106 BA0

108 V

110 BA1

112 A11

114 V

116 DQM6

118 DQM7

120 V

122 DQ56

124 DQ57

126 DQ58

128 DQ59

130 V

132 DQ60

134 DQ61

136 DQ62

138 DQ63

140 V

142 **SCL

144 V

PIN NAMES

Pin Name

A0 ~ A11

BA0 ~ BA1

DQ0 ~ DQ63

CLK0

CKE0

CS0

RAS

CAS

DQM0 ~ 7

SDA

SCL

Function

Address input (Multiplexed)

Select bank

Data input/output

Clock input

Clock enable input

Chip select input

Row address storbe

Column address strobe

Write enable

DQM

Power supply (3.3V)

Ground

Serial data I/O

Serial clock

Don′t use

No connection

* These pins are not used in this module.

These pins should be NC in the system

which does not support SPD.

* SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 0.1 Sept. 2001

M464S0924DTS-L7C Related Products

	M464S0924DTS-L7C	M464S0924DTS-L1L	M464S0924DTS-L1H	M464S0924DTS-L7A	M464S0924DTS-C7C	M464S0924DTS-C1L	M464S0924DTS-C7A	M464S0924DTS	M464S0924DTS-C1H
Description	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD	8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-	SAMSUNG
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	-	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	-	DIMM, DIMM144,32
Contacts	144	144	144	144	144	144	144	-	144
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	-	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns	6 ns	6 ns	5.4 ns	5.4 ns	6 ns	5.4 ns	-	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	100 MHz	100 MHz	133 MHz	133 MHz	100 MHz	133 MHz	-	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	-	R-XDMA-N144
memory density	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	-	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64	64	-	64
Humidity sensitivity level	1	1	1	1	1	1	1	-	1
Number of functions	1	1	1	1	1	1	1	-	1
Number of ports	1	1	1	1	1	1	1	-	1
Number of terminals	144	144	144	144	144	144	144	-	144
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	-	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000	8000000	-	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C
organize	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	-	8MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	-	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	-	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225	-	225
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	-	4096
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	-	25.4 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	-	YES
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	-	0.008 A
Maximum slew rate	0.88 mA	0.76 mA	0.76 mA	0.8 mA	0.88 mA	0.76 mA	0.8 mA	-	0.76 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	-	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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