30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | SUBSTRATE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (Abs) (ID) | 0.03 A |
| Maximum drain current (ID) | 0.03 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 1.3 pF |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 3N158A | 3N155 | 3N155A | 3N156A | 3N157A | |
|---|---|---|---|---|---|
| Description | 30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | 30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | 30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | 30mA, 35V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | 30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE | SUBSTRATE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 50 V | 35 V | 35 V | 35 V | 50 V |
| Maximum drain current (Abs) (ID) | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| Maximum drain current (ID) | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 1.3 pF | 1.3 pF | 1.3 pF | 1.3 pF | 1.3 pF |
| JEDEC-95 code | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 |
| JESD-30 code | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W | 0.3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | CHOPPER | CHOPPER | CHOPPER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| Maximum drain-source on-resistance | - | 600 Ω | 300 Ω | 300 Ω | - |
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