7MBP25RA120
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
1200V / 25A 7 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at
Tc=25°C unless otherwise specified)
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
Symbol
V
DC
V
DC(surge)
V
SC
V
CES
V
R
DC
1ms
DC
DB
Collector power dissipation
Collector current
Forward current of Diode
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
One transistor
Rating
Min.
0
0
200
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
Max.
900
1000
800
1200
1200
25
50
25
198
15
30
15
120
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
Unit
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
T
j
V
CC
DC
1ms
*1
V
in *2
I
in
V
ALM *3
I
ALM *4
T
stg
T
op
V
iso
Fig.1 Measurement of case temperature
*5
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit
(at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Condition
Min.
Typ. Max.
V
CE
=1200V input terminal open
I
CES
Ic=25A
V
CE(sat)
-Ic=25A
V
F
V
CE
=1200V input terminal open
I
CES
Ic=15A
V
CE(sat)
-Ic=15A
V
F
Unit
–
–
–
–
–
–
–
–
–
–
–
–
1.0
2.6
3.0
1.0
2.6
3.0
mA
V
V
mA
V
V
DB
7MBP25RA120
Electrical characteristics of control circuit(at
Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
DB
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*
7
Switching frequency of IPM
Symbol Condition
I
ccp
fsw=0 to 15kHz Tc=-20 to 100°C *
7
I
CCN
fsw=0 to 15kHz Tc=-20 to 100°C *
7
V
in(th)
ON
OFF
V
Z
Rin=20k ohm
T
COH
T
CH
T
jOH
T
jH
I
OC
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
VDC=0V, Ic=0A, Case temperature Fig.1
surface of IGBT chips
Tj=125°C
Tj=125°C
Tj=25°C Fig.2
IGBT-IPM
Min.
Typ.
Max.
3
-
18
10
-
65
1.00
1.35
1.70
1.25
-
110
-
150
-
38
23
-
11.0
0.2
1.5
-
1425
Unit
mA
Tj=25°C Fig.3
mA
V
1.60
1.95 V
V
8.0
-
°C
-
125
°C
20
-
°C
-
-
°C
20
-
A
-
-
A
-
-
µs
10
-
-
12.5 V
V
-
-
ms
2
-
µs
-
12
ohm
1500
1575
Dynamic characteristics(at
Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Switching time (FWD)
Symbol Condition
ton
toff
trr
IC=25A, VDC=600V
IF=25A, VDC=600V
Min.
0.3
-
-
Typ.
-
-
-
Max.
-
3.6
0.4
Unit
µs
µs
µs
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
DB
Case to fin thermal resistance with compound
IGBT
FWD
IGBT
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
-
-
-
0.05
Max.
0.63
1.33
1.04
-
Unit
°C/W
°C/W
°C/W
°C/W
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
V
DC
V
CC
f
SW
-
-
Min.
200
13.5
1
2.5
2.5
Typ.
-
15
-
-
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
7MBP25RA120
Block diagram
IGBT-IPM
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
7MBP25RA120
Characteristics (Representative)
Control Circuit
IGBT-IPM
Power supply current vs. Switching frequency
Tj=100°C
30
Input signal threshold voltage
vs. Power supply voltage
2.5
Tj=25°C
Tj=125°C
Power supply current : Icc (mA)
25
Vcc=15V
Vcc=13V
Input signal threshold voltage
: Vin(on),Vin(off) (V)
P-side
N-side
Vcc=17V
2
} Vin(off)
1.5
} Vin(on)
20
15
1
10
Vcc=17V
Vcc=15V
5
Vcc=13V
0.5
0
0
5
10
15
20
25
0
12
13
14
15
16
17
Power supply voltage : Vcc (V)
18
Switching frequency : fsw (kHz)
Under voltage vs. Junction temperature
14
12
Under voltage hysterisis vs. Jnction temperature
1
Under voltage hysterisis : VH (V)
0.8
Under voltage : VUVT (V)
10
8
6
4
2
0
0.6
0.4
0.2
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
Alarm hold time vs. Power supply voltage
Over heating protection : TcOH,TjOH (°C)
OH hysterisis : TcH,TjH (°C)
3
200
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
TjOH
150
TcOH
100
Alarm hold time : tALM (mSec)
2.5
Tj=125°C
2
Tj=25°C
1.5
1
50
TcH,TjH
0.5
0
12
0
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
7MBP25RA120
Inverter
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=25°C
40
Vcc=17V
35
35
Vcc=15V
Collector current vs. Collector-Emitter voltage
Tj=125°C
40
Vcc=17V
Vcc=15V
Collector Current : Ic (A)
30
25
20
15
10
5
0
Collector Current : Ic (A)
Vcc=13V
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
Vcc=13V
0
0.5
1
1.5
2
2.5
3
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C
10000
10000
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
Switching time : ton,toff,tf (nSec)
Switching time : ton,toff,tf (nSec)
toff
ton
1000
tf
toff
1000
ton
100
tf
100
10
0
5
10
15
20
25
30
35
40
10
0
5
10
15
20
25
30
35
40
Collector current : Ic (A)
Collector current : Ic (A)
Forward current vs. Forward voltage
40
35
125°C
Reverse recovery characteristics
trr,Irr vs. IF
1000
25°C
Reverse recovery current : Irr(A)
Reverse recovery time : trr(nSec)
trr125°C
trr25°C
100
Forward Current : If (A)
30
25
20
15
10
5
0
Irr125°C
10
Irr25°C
0
0.5
1
1.5
2
2.5
3
1
0
5
10
15
20
25
30
35
40
Forward voltage : Vf (V)
Forward current : IF(A)
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