Power Integrated Module (PIM)
n
Features
•
•
•
•
n
Outline Drawing
Included Rectifier and Brake Chopper
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function
( ~ 3 Times Rated Current )
n
Equivalent Circuit
n
Absolute Maximum Ratings
( T
c
=25°C)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I
2
t
(Non Repetitive)
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Operating Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Screw Torque *
1
Symbols
V
CES
V
GES
I
C
I
C PULSE
-I
C PULSE
P
C
V
RRM
V
RSM
I
O
I
FSM
V
CES
V
GES
I
C
I
C PULSE
P
C
V
RRM
I
F(AV)
I
FSM
T
j
T
Stg
V
ISO
Test Conditions
Ratings
600
±
20
50
100
50
200
800
900
50
350
648
600
±
20
50
100
200
600
1
50
+150
-40
∼
+125
2500
1.7
Units
V
A
W
V
A
A
2
s
V
A
W
V
A
°C
V
Nm
Continuous
1ms
1ms
1 device
50Hz/60Hz sin. wave
T
j
=150°C, 10ms
T
j
=150°C, 10ms
Continuous
1ms
1 device
10ms
A.C. 1min.
Note:
*1:Recommendable Value; 1.3
∼
1.7 Nm (M4)
n
Electrical Characteristics
( T
j
=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Forward Voltage
Reverse Current
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
Reverse Current
Reverse Recovery Time
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
V
FM
I
RRM
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
t
rr
Test Conditions
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=50mA
V
GE
=15V I
C
=50A
f=1MHz, V
GE
=0V,
V
CE
=10V
V
CC
=
300V
I
C
= 50A
V
GE
=
±15V
R
G
= 51Ω
I
F
=50A V
GE
=0V
I
F
=50A
I
F
= 50A
V
R
=800V
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=± 20V
V
GE
=15V I
C
=50A
V
CC
=
300V
I
C
= 50A
V
GE
=
±15V
R
G
= 51Ω
V
R
=600V
Min.
Max.
1.0
20
4.5
7.5
2.9
3300 (typ.)
1.2
0.6
1.0
0.35
3.1
350
1.55
1.0
1.0
100
2.8
0.8
0.6
1.0
0.35
1.0
600
Units
mA
µA
V
pF
µs
V
ns
V
mA
mA
nA
V
µs
mA
ns
n
Thermal Characteristics
Items
Thermal Resistance (1 device)
Contact Thermal Resistance
Symbols
R
th(j-c)
R
th(c-f)
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With Thermal Compound
Min.
Max.
0.63
1.60
0.63
2.10
0.05 (typ.)
Units
°C/W
Collector current vs. Collector-Emitter voltage
T
j
=25°C
125
V
GE
=20V,15V,12V,
100
100
C
Collector current vs. Collector-Emitter voltage
T
j
=125°C
125
V
GE
=20V,15V, 12V,
C
[A]
Collector current : I
10V
Collector current : I
75
[A]
75
10V
50
50
25
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
25
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25°C
10
10
CE
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125°C
[V]
CE
8
[V]
8
Collector-Emitter voltage : V
6
Collector-Emitter voltage : V
6
4
I
C
=
100A
50A
25A
4
I
C
=
100A
50A
2
2
25A
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
Switching time vs. Collector current
V
CC
=300V, R
G
=51
W
, V
GE
=±15V, T
j
=25°C
1000
1000
Switching time vs. Collector current
V
CC
=300V, R
G
=51
Ω
, V
GE
=±15V, T
j
=125°C
, t
r
, t
off
, t
f
[nsec]
, t
r
, t
off
, t
f
[nsec]
t
on
t
off
t
off
t
on
t
r
t
f
t
r
t
f
100
on
on
100
Switching time : t
10
0
20
40
60
80
Collector current : I
C
[A]
Switching time : t
10
0
20
40
60
80
Collector current : I
C
[A]
Switching time vs. R
G
V
CC
=300V, I
C
=30A, V
GE
=±15V, T
j
=25°C
500
Dynamic input characteristics
T
j
=25°C
25
V
CC
=200V
, t
r
, t
off
, t
f
[nsec]
1000
CE
t
on
t
off
t
r
t
f
[V]
400
300V
400V
20
Collector-Emitter voltage : V
300
15
on
Switching time : t
100
200
10
100
5
10
10
100
Gate resistance : R
G
[
Ω
]
FRD
Forward current vs. Forward voltage
V
GE
= O V
70
0
0
50
100
150
0
Gate charge : Q
G
[nC]
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
[nsec]
T
j
=125°C 25°C
[A]
60
t
rr
125°C
100
t
rr
25°C
[A]
rr
Reverse recovery current : I
50
40
30
20
10
0
0
1
2
Forward voltage : V
F
[V]
3
4
F
Forward current : I
Reverse recovery time
:t
rr
I
rr
125°C
10
I
rr
25°C
1
0
10
20
30
40
50
Forward current : I
F
[A]
Reversed biased safe operating area
Transient thermal resistance
300
FRD
Converter Diode
1
C
[A]
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>82
Ω
[°C/W]
250
IGBT
th(j-c)
200
SCSOA
(non-repetitive pulse)
150
Thermal resistance : R
Collector current : I
0,1
100
50
RBSOA (Repetitive pulse)
0
0,001
0,01
0,1
1
0
100
200
300
400
500
600
Pulse width : PW [sec]
Collector-Emitter voltage : V
C E
[V]
Switching loss vs. Collector current
5
V
CC
=300V, R
G
=51
Ω
, V
GE
=±15V
10
Capacitance vs. Collector-Emitter voltage
T
j
=25°C
, E
off
, E
rr
[mJ/cycle]
4
, C
oes
, C
res
[nF]
E
off
125°C
C
ies
3
E
off
25°C
on
Switching loss : E
2
Capacitance : C
E
on
125°C
E
on
25°C
ies
1
C
oes
C
res
0,1
1
E
rr
125°C
E
rr
25°C
0
20
40
60
80
Collector Current : I
C
[A]
Converter Diode
Forward current vs. Forward voltage
60
V
GE
= O V
T
j
=125°C 25°C
50
0
0
5
10
15
20
25
30
35
Collector-Emitter Voltage : V
CE
[V]
[A]
Forward current : I
F
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
Forward voltage : V
F
[V]
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