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7MBR75U4B120-50

Description
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
CategoryThe transistor   
File Size504KB,15 Pages
ManufacturerFuji Electric Co., Ltd.
Environmental Compliance  
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7MBR75U4B120-50 Overview

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

7MBR75U4B120-50 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFuji Electric Co., Ltd.
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X24
Contacts24
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)75 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X24
Number of components7
Number of terminals24
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal surfaceCOPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)440 ns
Nominal on time (ton)960 ns
Base Number Matches1
SPECIFICATION
Device Name
Type Name
Spec. No.
:
:
:
Power Integrated Module
7MBR75U4B120
MS6M 0855
Feb. 02 ’05
Feb. 02 ’05
S.Miyashita
M.W atanabe
Y.Seki
K.Yamada
MS6M0855
1
15
H04-004-07b

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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