7MBR50SB060
IGBT MODULE (S series)
600V / 50A / PIM
IGBT Modules
Features
· Low V
CE
(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Inverter
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Brake
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t
(Non-Repetitive)
Symbol
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
Continuous
1ms
1 device
Condition
Rat ing
600
±20
50
100
50
200
600
±20
30
60
120
600
800
50
350
613
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
2
s
°C
°C
V
V
N·m
Continuous
1ms
1 device
Converter
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
Operating junction temperature
Storage temperature
T
stg
Isolation between terminal and copper base *2 V
iso
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
Condition
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, Ic=50A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=50A
V
GE
=±15V
R
G
=51Ω
I
F
=50A
chip
terminal
7MBR50SB060
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5
7.8
8.5
1.8
1.95
5000
0.45
0.25
0.08
0.40
0.05
1.75
1.9
2.4
1.2
0.6
1.0
0.35
V
2.6
0.3
1.0
0.2
2.4
1.2
0.6
1.0
0.35
1.0
1.5
1.0
520
3450
K
µs
mA
µA
V
µs
pF
µs
Unit
mA
µA
V
V
Inverter
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Brake
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Converter
I
F
=50A
V
CES
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=30A, V
GE
=15V chip
terminal
V
CC
=300V
I
C
=30A
V
GE
=±15V
R
G
=82Ω
V
R
=600V
I
F
=50A
chip
terminal
V
R
=800V
T=25°C
T=100°C
T=25/50°C
465
3305
1.8
1.95
0.45
0.25
0.40
0.05
1.1
1.2
5000
495
3375
mA
V
mA
Ω
Item
Thermistor
Thermal resistance Characteristics
Symbol
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
Characteristics
Typ.
Max.
0.63
1.33
1.04
0.90
0.05
°C/W
Unit
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter]
21(P)
[B ra k e ]
2 2 (P 1 )
8
9
[In v er ter ]
[Thermistor]
2 0 (G u)
1 8 (G v)
1 6 (G w )
1(R)
2(S)
3(T)
7 (B )
1 9 (E u )
4 (U )
1 7 (E v )
5 (V )
1 5 (E w )
6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z)
1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
7MBR50SB060
[ Inverter ]
Collector current vs. Collector-Emitter voltage
120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
120
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V
100
15V
12V
100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
60
Collector current : Ic [ A ]
80
80
60
40
40
10V
20
10V
20
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
120
10
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 C (typ.)
o
100
Tj= 25 C
o
Tj= 125 C
8
Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
80
6
60
4
40
Ic=100A
2
Ic= 50A
Ic= 25A
20
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25
20000
o
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25
500
o
C
C
25
10000
400
Capacitance : Cies, Coes, Cres [ pF ]
Cies
Collector - Emitter voltage : VCE [ V ]
20
Gate - Emitter voltage : VGE [ V ]
300
15
1000
200
10
Coes
Cres
100
5
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
0
0
50
100
150
200
250
Gate charge : Qg [ nC ]
0
300
IGBT Modules
7MBR50SB060
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, Rg=51Ω, Tj=25°C
1000
1000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, Rg=51Ω, Tj=125°C
toff
toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
ton
tr
ton
tr
100
100
tf
tf
10
0
20
40
Collector current : Ic [ A ]
60
80
10
0
20
40
Collector current : Ic [ A ]
60
80
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=50A, V
GE
=±15V, Tj=25°C
5000
5
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, V
GE
=±15V, Rg=51Ω
ton
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
toff
tr
4
Eon(125 C)
Eoff(125 C)
o
o
Switching time : ton, tr, toff, tf [ nsec ]
1000
3
Eon(25 C)
o
100
tf
2
Eoff(25 C)
o
1
Err(125 C)
o
Err(25 C)
10
10
50
100
Ω
]
o
0
500
0
20
40
60
80
100
Gate resistance : Rg [
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=50A, V
GE
=±15V, Tj=125°C
10
120
[ Inverter ]
Reverse bias safe operating area
+V
GE
=15V, -V
GE
<15V, Rg>51Ω, Tj<125°C
=
=
=
Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
8
100
6
Collector current : Ic [ A ]
500
80
60
Eoff
4
40
2
20
Err
0
10
50
100
Ω
]
0
0
200
400
600
800
Gate resistance : Rg [
Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR50SB060
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
120
300
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, V
GE
=±15V, Rg=51Ω
100
Tj=125 C
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
Tj=25 C
Forward current : IF [ A ]
80
o
o
100
trr(125 C)
o
60
trr(25 C)
o
40
Irr(125 C)
o
20
Irr(25 C)
o
0
0
1
2
3
Forward on voltage : VF [ V ]
10
0
20
40
Forward current : IF [ A ]
60
80
[ Converter ]
Forward current vs. Forward on voltage (typ.)
120
100
Tj= 25 C
o
Tj= 125 C
o
Forward current : IF [ A ]
80
60
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
5
200
100
FWD[Inverter]
IGBT[Brake]
Conv. Diode
IGBT[Inverter]
Resistance : R [ k
Ω
]
10
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
1
o
0.1
1
0.01
0.001
0.01
0.1
1
0.1
-60
-40
-20
0
20
40
60
80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
DSP and ARM Processors
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