7MBR50SB060-01 datasheet, PDF - EEWORLD Datasheet

7MBR50SB060-01: DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES; CategoryThe transistor; File Size448KB，11 Pages; ManufacturerFuji Electric Co., Ltd.

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7MBR50SB060-01 Overview

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	600 V
Gate-emitter maximum voltage	20 V
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	200 W
VCEsat-Max	2.4 V
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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