7MBR50SB060 datasheet, PDF - EEWORLD Datasheet

7MBR50SB060: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-35; CategoryThe transistor; File Size744KB，10 Pages; ManufacturerFuji Electric Co., Ltd.

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7MBR50SB060 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-35

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X24
Contacts	35
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	600 V
Configuration	COMPLEX
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X24
Number of components	7
Number of terminals	24
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	450 ns
Nominal on time (ton)	700 ns
VCEsat-Max	2.45 V
Base Number Matches	1

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