7MBR35SB140 datasheet, PDF - EEWORLD Datasheet

7MBR35SB140: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-35; CategoryThe transistor; File Size575KB，7 Pages; ManufacturerFuji Electric Co., Ltd.

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7MBR35SB140 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-35

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X24
Contacts	35
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	1400 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X24
Number of components	7
Number of terminals	24
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	530 ns
Nominal on time (ton)	600 ns
Base Number Matches	1

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