7MBR25SA140
IGBT MODULE (S series)
1400V / 25A / PIM
IGBT Modules
Features
· Low V
CE
(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Symbol
V
CES
V
GES
I
C
Collector current
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
Collector power disspation
Repetitive peak reverse voltage
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Condition
Rating
1400
±20
Continuous
1ms
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
35
25
70
50
25
180
1400
±20
25
15
50
30
110
1400
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
2
s
°C
°C
V
N·m
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Brake
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=75°C
Tc=25°C
Tc=75°C
Converter
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
2
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
It
(Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Inverter
7MBR25SA140
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
Condition
V
CE
=1400V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=25mA
V
GE
=15V, Ic=25A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=800V
I
C
=25A
V
GE
=±15V
R
G
=51Ω
I
F
=25A
chip
terminal
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5
7.2
8.5
2.2
2.3
3000
0.35
0.25
0.1
0.45
0.08
2.4
2.5
2.7
1.2
0.6
1.0
0.3
V
3.3
0.35
1.0
0.2
2.7
1.2
0.6
1.0
0.3
1.0
1.5
1.0
520
3450
K
µs
mA
µA
V
µs
pF
µs
Unit
mA
µA
V
V
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Brake
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Converter
I
F
=25A
V
CES
=1400V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=15A, V
GE
=15V chip
terminal
V
CC
=800V
I
C
=15A
V
GE
=±15V
R
G
=82
Ω
V
R
=1400V
I
F
=25A
chip
terminal
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
465
3305
2.2
2.3
0.35
0.25
0.45
0.08
1.1
1.2
5000
495
3375
mA
V
mA
Ω
Thermal resistance Characteristics
Item
Symbol
Condition
Min.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
Characteristics
Typ.
Max.
0.69
1.30
1.14
0.90
0.05
°C/W
Unit
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter]
21(P)
[Brake]
22(P1)
[Inverter]
[Thermistor]
8
20(Gu)
18(Gv)
16(Gw)
9
1(R)
2(S)
3(T)
7(B)
19(Eu)
4(U)
17(Ev)
5(V)
15(Ew)
6(W)
14(Gb)
13(Gx)
12(Gy)
11(Gz)
10(En)
23(N)
24(N1)
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
7MBR25SA140
60
60
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
50
VGE= 20V
12V
15V
50
VGE= 20V
15V
12V
Collector current : Ic [ A ]
40
10V
30
Collector current : Ic [ A ]
40
10V
30
20
20
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
10
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Tj= 25°C
50
Tj= 125°C
40
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
30
4
Ic= 50A
2
Ic= 25A
Ic= 12.5A
20
10
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=25A, Tj= 25°C
25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
Cies
600
15
1000
400
10
Coes
200
5
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
0
0
50
100
150
200
Gate charge : Qg [ nC ]
0
250
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR25SA140
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg=51 ohm, Tj= 25°C
1000
1000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg= 51 ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton
tr
tr
100
tf
50
0
10
20
Collector current : Ic [ A ]
30
40
100
tf
50
0
10
20
Collector current : Ic [ A ]
30
40
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=25A, VGE=±15V, Tj= 25°C
5000
10
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg=51 ohm
Eon(125°C)
9
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
8
7
6
Eoff(125°C)
5
4
3
Err(125°C)
2
Err(25°C)
1
Eon(25°C)
1000
500
toff
Eoff(25°C)
ton
100
tr
tf
50
10
0
50
100
500
0
10
20
30
40
50
Gate resistance : Rg [ohm]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=800V, Ic=25A, VGE=±15V, Tj= 125°C
20
60
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>51 ohm, Tj=<125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
15
50
Collector current : Ic [ A ]
Eoff
Err
50
100
500
40
10
30
20
5
10
0
10
0
0
200
400
600
800
1000
1200
1400
1600
Gate resistance : Rg [ohm]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR25SA140
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
60
300
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=800V, VGE=±15V, Rg=51ohm
50
Tj=125°C
Tj=25°C
trr(125°C)
100
trr(25°C)
40
30
20
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
10
Irr(125°C)
Irr(25°C)
0
0
1
2
3
4
Forward on voltage : VF [ V ]
10
0
10
20
Forward current : IF [ A ]
30
40
[ Converter ]
Forward current vs. Forward on voltage (typ.)
60
Tj= 25°C
50
Tj= 125°C
Forward current : IF [ A ]
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
5
200
100
FWD[Inverter]
1
IGBT[Brake]
Conv. Diode
IGBT[Inverter]
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ °C/W ]
Resistance : R [ k ohm ]
10
0.1
1
0.01
0.001
0.01
0.1
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
Pulse width : Pw [ sec ]
Temperature [°C]
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