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CM800E6C-66H

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size76KB,7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

CM800E6C-66H Overview

HIGH POWER SWITCHING USE INSULATED TYPE

CM800E6C-66H Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X9
Contacts9
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)800 A
Collector-emitter maximum voltage3300 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X9
Number of components2
Number of terminals9
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)9600 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max4.2 V
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800E6C-66H
q
I
C ...................................................................
800A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-element in a Pack (for brake)
q
AISiC Baseplate
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57
±0.1
190
±0.5
171
±0.1
57
±0.1
57
±0.1
6 - M8 NUTS
C
20
–0.2
+0.1
C
C
K (C)
G
E
124
±0.1
140
±0.5
40
±0.2
E
E
A (E)
C
C
C
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25
±0.2
41.25
±0.3
3 - M4 NUTS
79.4
±0.3
61.5
±0.3
61.5
±0.3
13
±0.2
5
±0.15
38
+1
0
screwing depth
min. 16.5
8 -
φ7
±0.1
MOUNTING HOLES
15
±0.2
40
±0.3
5.2
±0.2
29.5
±0.5
screwing depth
min. 7.7
28
+1
0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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