RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HER301G
THRU
HER308G
HIGH EFFICIENCY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Glass passivated junction
Low power loss, high efficiency
Low leakage
Low forward voltage drop
High current capability
High speed switching
High reliability
High current surge
DO-201AD
MECHANICAL DATA
*
*
*
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Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.20 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
DIA.
.197 (5.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
200
70
-65 to + 175
HER301G HER302G HER303G HER304G HER305G HER305PG HER306G HER307G HER308G
UNITS
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
150
50
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
=- 0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
HER301G HER302G HER303G HER304G HER305G HER305PG HER306G HER307G HER308G
UNITS
o
1.0
1.3
10
1.0
1.70
Volts
uAmps
uAmps
I
R
150
trr
50
75
nSec
2001-5
RATING AND CHARACTERISTIC CURVES ( HER301G THRU HER308G )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
6
5
4
3
2
1
0
0
25 50 75 100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
0
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
10/20 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
1000
100
10
200
V
400
V
00/
50/
1
300
/
TJ = 100
1.0
TJ = 25
0.1
.1
Pulse Width = 300uS
1% Duty Cycle
.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.01
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT, (A)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
300
JUNCTION CAPACITANCE, (pF)
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
TJ = 25
HER
3
HE
60
1.0
TJ = 25
0/8
R30
1G~
00
HE
/10
10
00
R30
V
TJ = 150
5G
200
06G
~HE
R30
8
G
100
HER301G~HER305G
HER306G~HER308G
0
1
10
100
1000
NUMBER OF CYCLES AT 60Hz
RECTRON
Microcontroller MCU
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