7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
7EL2 Primary Protector
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
V
(BR)
Device
Minimum
V
7EL2
±245
V
(BO)
Minimum
V
±265
V
(BO)
Maximum
V
±400
Cell Package (Side View)
T( A)
R( B)
MD4XACAa
Rated for International Surge Wave Shapes
ITU-T K28
Device
(10/700)
I
TSP
A
7EL2
±400
GR-974-CORE
(10/1000)
I
TSP
A
±300
T
Device Symbol
Gas Discharge Tube (GDT) Replacement
Planar Passivated Junctions in a Protected Cell Construction
- Low Off-State Current < 0.5
µ
A
-Extended Service Life
R
SD4XAA
Soldered Copper Electrodes
- High Current Capability
- Cell Construction Short Circuits Under Excessive Current Conditions
Terminals T and R correspond to the
alternative line designators of A and B
............................................ UL Recognized Components
Description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of
Telcordia GR-974-CORE or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 7EL2 must be
installed in a housing which maintains a stable microclimate during these tests.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. In usual applications, the high crowbar holding current prevents
d.c. latchup as the diverted current subsides. This 7EL2 is designed to voltage limit and withstand the listed international lightning surges in
both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This
packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity,
enabling a power line cross current capability of 10 A rms for 1 second. One of the 7EL2’s copper electrodes is specially shaped to promote a
progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 7EL2 in compression, so that the cell
electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 7EL2 will fail short circuit,
providing maximum protection to the equipment.
JANUARY 1999 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
1
7EL2 Primary Protector
Absolute Maximum Ratings, T
A
= 25
°C
(Unless Otherwise Noted)
Rating
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
5/310
µs
(ITU-T K28, 10/700
µs
voltage wave shape)
10/1000
µs
(GR-974-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Note 1)
full sine wave, 50/60 Hz, 1 s
Junction temperature
Storage temperature range
-40
°C
to 65
°C
I
TSM
T
J
T
stg
10
-40 to +150
-40 to +150
A rms
°C
°C
-20
°C
to 65
°C
-20
°C
to 65
°C
I
TSP
400
300
A
Symbol
Value
Unit
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium.
2. Most PTTs quote an unloaded voltage waveform. In operation the 7EL2 essentially shorts the generator output. The resulting
loaded current waveform is specified.
Electrical Characteristics for the T and R Terminals, T
A
= 25
°C
(Unless Otherwise Noted)
Parameter
V
(BR)
V
(BO)
V
(BO)
Breakdown Voltage
Breakover voltage
Impulse breakover
voltage
Impulse reset
Test Conditions
I
(BR)
=
±20
mA, (see Note 3)
dv/dt =
±0.2
V/s, R
SOURCE
> 200
Ω
100 V/µs
≤
dv/dt
≤
±1000
V/µs,
di/dt
≤
10 A/µs
Sources are 52.5 V O.C., 260 mA S.C. and
135 V O.C., 200 mA S.C.
on-state current 25 A, 10/1000
µs
impulse
I
D
C
off
Off-state current
Off-state capacitance
V
D
=
±50
V (see Note 4)
V
D
=
±200
V
f = 1 MHz,
V
d
= 1 Vrms, V
D
= 0,
-40
°C
to 65
°C
-40
°C
to 65
°C
-40
°C
to 65
°C
±0.5
±10
200
µA
pF
-40
°C
to 65
°C
20
ms
-40
°C
to 65
°C
+15
°C
to 25
°C
-40
°C
to 65
°C
-40
°C
to 65
°C
Min
±245
±265
±400
±400
Typ
Max
Unit
V
V
V
NOTES: 3. Meets Telcordia GR-974-CORE Issue 2, December 1999 - Rated Voltage Test (4.7).
4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment.
2
JANUARY 1999 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
7EL2 Primary Protector
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
V
(BR)
-v
I
(BR)
V
(BR)
V
D
I
D
I
D
V
D
I
(BR)
+v
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAG
Figure 1. Voltage-Current Characteristic for the T and R Terminals
All Measurements are Referenced to the R Terminal
JANUARY 1999 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
3
7EL2 Primary Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
NORMALIZED BREAKDOWN VOLTAGE (V
(BR)
)
TCVAG
1.15
vs
JUNCTION TEMPERATURE
I
(BR)
=
±20
mA
TC4VAH
10
|I
D
| - Off-State Current -
µA
1.10
V
D
=
±200
V
1
Normalized Voltage
1.05
0.1
V
D
=
±50
V
1.00
0.01
0.001
-25
0
25
50
75
100
125
T
J
- Junction Temperature -
°C
150
0.95
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
Figure 2.
Figure 3.
NORMALIZED BREAKOVER VOLTAGE (V
(BO)
)
vs
JUNCTION TEMPERATURE
TC4VAJ
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4VAK
1.5
1.05
Normalized Holding Current
Normalized Voltage
1.0
0.9
0.8
0.7
0.6
0.5
1.00
0.95
-25
0
25
50
75
100
125
T
J
- Junction Temperature -
°C
150
0.4
-25
0
25
50
75
100
125
T
J
- Junction Temperature -
°C
150
Figure 4.
Figure 5.
JANUARY 1999 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
4
7EL2 Primary Protector
Typical Characteristics (Continued)
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
200
TC4VAM
200
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
TC4VAL
V
D
= 0
Off-State Capacitance - pF
Off-State Capacitance - pF
100
90
80
70
60
50
40
V
d
= 1 Vrms, f = 1 MHz, T
A
= 25
°C
30
0.1
V
D
Positive
100
90
80
70
60
50
40
V
D
= +50 V
V
D
Negative
V
D
= - 50 V
V
d
= 1 Vrms, f = 1 MHz
30
-40
1
10
V
D
- DC Off-State Voltage - V
100
-20
0
20
40
60
T
J
- Junction Temperature -
°C
80
Figure 6.
Figure 7.
CUMULATIVE POPULATION
vs
10/1000 CURRENT CAPABILITY
TC4VAN
99
98
95
Cumulative Population - %
90
80
70
60
50
40
30
20
10
5
2
1 +65
°C
+25
°C
-5
°C
-20
°C
= T
A
0.5
370 380 390 400 410 420 430 440 450 460 470
I - Peak Current Capability - A
Figure 8.
JANUARY 1999 - REVISED OCTOBER 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
5
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