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GM882

Description
NPN EPITAXIAL PLANAR TRANSISTOR
File Size198KB,2 Pages
ManufacturerGTM
Websitehttp://www.gtm.com.tw/
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GM882 Overview

NPN EPITAXIAL PLANAR TRANSISTOR

GM882
Description
Package Dimension
1/2
NPN EPITAXIAL PLANAR T RANSISTOR
T
he GM882 is suited for the output stage of 1.5W audio, voltage regulator , and relay driver.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
40
30
5.0
3.0
1.2
V
V
V
A
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
FT
Cob
at Ta = 25 :
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
MHz
Pf
Unit
V
V
V
uA
uA
V
V
IC=100uA ,IE=0
IC=1mA,IB=0
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
Test Conditions
Classification Of hFE
Rank
Range
Q
100-200
P
160-320
E
250-500

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